SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

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SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240341206 titled 'SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

Simplified Explanation: The patent application describes semiconductor devices with memory cells that have a resistive layer, a selector layer, and a memory layer for data storage.

The memory cells consist of a resistive layer with specific resistance, a selector layer for threshold switching, and a memory layer for data storage.
The resistive layer has a lower portion and an upper portion, with the upper portion wider than the lower portion.
The selector layer controls the conductive states based on applied voltage relative to a threshold voltage.
The memory layer stores data in the semiconductor device.

Key Features and Innovation:

Memory cells with resistive, selector, and memory layers.
Different conductive states controlled by the selector layer.
Data storage capability in the memory layer.

Potential Applications:

Memory storage devices.
Computing systems.
Data processing applications.

Problems Solved:

Efficient data storage.
Controlled conductive states.
Improved memory cell performance.

Benefits:

Enhanced data storage capacity.
Reliable data processing.
Efficient memory cell operation.

Commercial Applications: Potential commercial applications include:

Memory chips for electronic devices.
Data storage solutions for servers.
Computing systems requiring high-speed data processing.

Prior Art: Readers can explore prior art related to resistive memory cells, selector layers, and memory storage devices in semiconductor technology.

Frequently Updated Research: Stay updated on advancements in resistive memory technology, selector layer innovations, and data storage solutions in semiconductor devices.

Questions about Semiconductor Devices: 1. What are the key components of a memory cell in a semiconductor device? 2. How does the selector layer control conductive states in memory cells?

Original Abstract Submitted

semiconductor devices and fabrication methods of semiconductor devices are disclosed. in an embodiment, a semiconductor device may include a plurality of memory cells, and each of the plurality of memory cells may include: a resistive layer including a material having a specific resistance and including a lower portion and an upper portion disposed over the lower portion, wherein a width of the lower portion is smaller than a width of an uppermost surface of the upper portion; a selector layer disposed over the resistive layer and structured to perform a threshold switching by exhibiting different electrically conductive states in response to an applied voltage relative to a threshold voltage; and a memory layer disposed over the selector layer and structured to store data.