Samsung electronics co., ltd. (20240349621). MAGNETIC MEMORY DEVICE simplified abstract
Contents
MAGNETIC MEMORY DEVICE
Organization Name
Inventor(s)
Bae-Seong Kwon of Incheon (KR)
MAGNETIC MEMORY DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240349621 titled 'MAGNETIC MEMORY DEVICE
Simplified Explanation:
This patent application describes a magnetic memory device with a unique structure that includes a lower contact plug and a data storage structure on top of it. The lower contact plug and the data storage structure have different thicknesses in a specific direction.
- The magnetic memory device includes a lower contact plug and a data storage structure.
- The data storage structure consists of a bottom electrode, a magnetic tunnel junction pattern, and a top electrode.
- The lower contact plug and the data storage structure have different thicknesses in a specific direction.
- The lower contact plug is significantly thicker than the data storage structure.
Key Features and Innovation:
- Unique structure with a lower contact plug and data storage structure.
- Different thicknesses of the lower contact plug and data storage structure.
- Sequential stacking of bottom electrode, magnetic tunnel junction pattern, and top electrode.
Potential Applications:
- Data storage devices.
- Magnetic memory applications.
- Computing systems.
Problems Solved:
- Efficient data storage.
- Improved magnetic memory performance.
- Enhanced computing capabilities.
Benefits:
- Higher data storage capacity.
- Faster data access.
- Increased computing speed.
Commercial Applications:
Magnetic memory devices can be used in various commercial applications such as data centers, cloud computing, and consumer electronics.
Questions about Magnetic Memory Devices:
1. How does the unique structure of this magnetic memory device improve data storage efficiency? 2. What are the potential challenges in implementing this technology in commercial products?
Original Abstract Submitted
a magnetic memory device includes a lower contact plug on a substrate and a data storage structure on the lower contact plug. the data storage structure includes a bottom electrode, a magnetic tunnel junction pattern, and a top electrode that are sequentially stacked on the lower contact plug. the lower contact plug and the data storage structure have a first thickness and a second thickness, respectively, in a first direction perpendicular to a top surface of the substrate. the first thickness of the lower contact plug is about 2.0 to 3.6 times the second thickness of the data storage structure.
