Samsung electronics co., ltd. (20240349491). SEMICONDUCTOR MEMORY DEVICE simplified abstract
Contents
SEMICONDUCTOR MEMORY DEVICE
Organization Name
Inventor(s)
Myeong-Dong Lee of Suwon-si (KR)
SEMICONDUCTOR MEMORY DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240349491 titled 'SEMICONDUCTOR MEMORY DEVICE
The semiconductor memory device described in the abstract includes active patterns that are extended in one direction and arranged side by side in another direction. Each active pattern has edge portions spaced apart from each other in the first direction. Word lines and bit lines are positioned to intersect each active pattern, with storage node contacts on the edge portion of one active pattern.
- The semiconductor memory device features first and second active patterns extended in one direction and arranged side by side in another direction.
- Each active pattern includes edge portions spaced apart from each other in the first direction.
- Word lines and bit lines intersect each active pattern.
- Storage node contacts are located on the edge portion of one active pattern.
- The storage node contact width at a lower level is larger than at a higher level when measured in the second direction.
Potential Applications: - Memory storage devices - Data processing systems - Integrated circuits
Problems Solved: - Efficient data storage - Enhanced memory performance - Improved data processing speed
Benefits: - Increased memory capacity - Faster data access - Enhanced overall system performance
Commercial Applications: Title: Advanced Semiconductor Memory Devices for High-Speed Data Processing This technology can be utilized in various commercial applications such as: - Consumer electronics - Telecommunications - Automotive systems
Questions about Semiconductor Memory Devices: 1. How does the storage node contact width impact memory performance? The storage node contact width at different levels affects the efficiency and speed of data storage and retrieval in semiconductor memory devices.
2. What are the key advantages of using active patterns with edge portions in memory devices? Active patterns with edge portions allow for more efficient data storage and access, leading to improved overall system performance.
Original Abstract Submitted
an example semiconductor memory device includes first and second active patterns, which are extended in a first direction and are disposed side by side in a second direction. each of the first and second active patterns includes first and second edge portions, which are spaced apart from each other in the first direction. a pair of word lines are disposed to cross each of the first and second active patterns, a pair of bit lines are disposed on each of the first and second active patterns and are extended in a third direction, and a storage node contacts on the first edge portion of the first active pattern. when measured in the second direction, a first width of the storage node contact at a first level is larger than a second width at a second level. the first level is lower than the second level.
