Samsung electronics co., ltd. (20240349490). SEMICONDUCTOR MEMORY DEVICE simplified abstract
Contents
SEMICONDUCTOR MEMORY DEVICE
Organization Name
Inventor(s)
SEMICONDUCTOR MEMORY DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240349490 titled 'SEMICONDUCTOR MEMORY DEVICE
The semiconductor memory device described in the patent application includes a bit line, semiconductor patterns, word lines, and a semiconductor dielectric pattern.
- The bit line extends in a first direction.
- The semiconductor patterns are spaced apart from each other in the first direction and consist of vertical and horizontal parts.
- The word lines are adjacent to the vertical parts of the semiconductor patterns.
- The semiconductor dielectric pattern includes capping patterns, sidewall dielectric patterns, an air gap, and an upper capping pattern.
Key Features and Innovation:
- Unique arrangement of semiconductor patterns and word lines for efficient memory storage.
- Use of semiconductor dielectric patterns with air gaps for improved performance.
- Precise alignment of vertical parts and sidewall dielectric patterns for enhanced functionality.
Potential Applications:
- High-speed memory devices for computers and mobile devices.
- Data storage systems in servers and data centers.
- Embedded memory in consumer electronics and automotive applications.
Problems Solved:
- Addressing the need for higher memory density in semiconductor devices.
- Improving data retention and access speeds in memory systems.
- Enhancing overall performance and reliability of memory devices.
Benefits:
- Increased memory capacity in a compact footprint.
- Faster data processing and retrieval.
- Lower power consumption and improved energy efficiency.
Commercial Applications:
- The technology can be utilized in the production of advanced memory chips for various electronic devices.
- It has the potential to revolutionize the semiconductor memory industry by offering higher performance and efficiency.
Questions about the technology: 1. How does the unique arrangement of semiconductor patterns and word lines contribute to the efficiency of memory storage? 2. What are the specific advantages of using semiconductor dielectric patterns with air gaps in memory devices?
Original Abstract Submitted
a semiconductor memory device includes a bit line that extends in a first direction, semiconductor patterns disposed on the bit line and spaced apart from each other in the first direction and each including a first vertical part, a second vertical part, and a horizontal part, first and second word lines disposed on the horizontal part and respectively adjacent to the first and second vertical parts, and a semiconductor dielectric pattern disposed on the bit line and between the semiconductor patterns. the semiconductor dielectric pattern includes a lower capping pattern, sidewall dielectric patterns spaced apart from each other in the first direction on the lower capping pattern, an air gap between the sidewall dielectric patterns, and an upper capping pattern disposed on the sidewall dielectric patterns. top surfaces of the sidewall dielectric patterns are at the same height as top surfaces of the first and second vertical parts.
