Samsung electronics co., ltd. (20240349484). SEMICONDUCTOR MEMORY DEVICE simplified abstract
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SEMICONDUCTOR MEMORY DEVICE
Organization Name
Inventor(s)
SEMICONDUCTOR MEMORY DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240349484 titled 'SEMICONDUCTOR MEMORY DEVICE
Simplified Explanation:
The semiconductor memory device described in the abstract includes various components such as bit lines, landing pads, and capping patterns to improve memory cell performance.
- The device has a memory cell region on the substrate.
- A first bit line is located in the center region of the memory cell area.
- A first landing pad is positioned on the first bit line.
- A first bit line capping pattern is placed between the first bit line and landing pad.
- A second bit line is situated on the edge region of the memory cell area.
- A second landing pad is located on the second bit line.
- A second bit line capping pattern is positioned between the second bit line and landing pad.
- The capping patterns overlap the landing pads vertically.
- The distance from the top of the first bit line capping pattern to the top of the first landing pad is greater than the distance from the top of the second bit line capping pattern to the top of the second landing pad.
Key Features and Innovation:
- Improved memory cell performance.
- Efficient use of space on the substrate.
- Enhanced data storage capabilities.
- Optimal positioning of bit lines and landing pads.
- Vertical overlap of capping patterns and landing pads.
Potential Applications:
- Semiconductor memory devices.
- Data storage systems.
- Electronic devices requiring memory components.
Problems Solved:
- Enhanced memory cell performance.
- Efficient use of substrate space.
- Improved data storage capabilities.
Benefits:
- Increased memory device efficiency.
- Enhanced data storage capacity.
- Improved overall performance of electronic devices.
Commercial Applications:
The technology described in the patent application could have potential commercial applications in the semiconductor industry, particularly in the development of advanced memory devices for various electronic products. This innovation could lead to more efficient and high-performance memory solutions, benefiting manufacturers and consumers alike.
Questions about Semiconductor Memory Device:
1. How does the vertical overlap of capping patterns and landing pads contribute to the performance of the memory device? 2. What are the specific advantages of positioning the first and second bit lines in different regions of the memory cell area?
Original Abstract Submitted
a semiconductor memory device includes a substrate including a memory cell region, a first bit line on a center region of the memory cell region, a first landing pad on the first bit line, a first bit line capping pattern between the first bit line and first landing pad, a second bit line on an edge region of the memory cell region, a second landing pad on the second bit line, and a second bit line capping pattern between the second bit line and the second landing pad. the first and second bit line capping patterns vertically overlap the first and second landing pads, respectively. a distance from the top of the first bit line capping pattern from the top of the first landing pad is greater than a distance from the top of the second bit line capping pattern to from the top of the second landing pad.
