Samsung electronics co., ltd. (20240347617). ELEMENTAL DOPING OF HIGH-K DIELECTRIC OXIDE TO CREATE P-TYPE CONDUCTIVITY IN THIN LAYER CHANNELS VIA SURFACE CHARGE TRANSFER simplified abstract
ELEMENTAL DOPING OF HIGH-K DIELECTRIC OXIDE TO CREATE P-TYPE CONDUCTIVITY IN THIN LAYER CHANNELS VIA SURFACE CHARGE TRANSFER
Organization Name
Inventor(s)
Nikhil Sivadas of Boston MA (US)
Yongwoo Shin of Concord MA (US)
Mahdi Amachraa of Cambridge MA (US)
ELEMENTAL DOPING OF HIGH-K DIELECTRIC OXIDE TO CREATE P-TYPE CONDUCTIVITY IN THIN LAYER CHANNELS VIA SURFACE CHARGE TRANSFER - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240347617 titled 'ELEMENTAL DOPING OF HIGH-K DIELECTRIC OXIDE TO CREATE P-TYPE CONDUCTIVITY IN THIN LAYER CHANNELS VIA SURFACE CHARGE TRANSFER
The abstract of the patent application describes a structure with a p-doped thin layer and an oxide high-k gate dielectric layer doped with various elements within a specific limit. Another structure includes a p-doped transition metal dichalcogenide layer with a binary oxide high-k gate dielectric layer doped with specific elements within a fractional limit.
- The innovation involves doping thin layers with specific elements to achieve p-doping through surface charge transfer doping.
- The thin layer in the structure has a thickness of 10 nm or less.
- The structures utilize high-k gate dielectric layers doped with various elements to achieve desired properties.
- The method described involves doping an oxide high-k gate dielectric layer with specific elements to p-dope the thin layer.
- The innovation aims to enhance the performance and functionality of electronic devices by controlling the doping of thin layers.
Potential Applications: - Semiconductor devices - Integrated circuits - Transistors
Problems Solved: - Controlling doping levels in thin layers - Enhancing device performance - Improving electronic device functionality
Benefits: - Improved device efficiency - Enhanced electronic properties - Better control over device characteristics
Commercial Applications: Title: Advanced Semiconductor Devices with Controlled Doping This technology can be applied in the semiconductor industry to develop more efficient and high-performance electronic devices. The innovation allows for precise control over doping levels in thin layers, leading to enhanced device functionality and performance. This can have significant implications in the development of advanced integrated circuits and transistors.
Questions about the technology: 1. How does the doping of thin layers impact the performance of electronic devices? 2. What are the potential challenges in implementing this technology in commercial semiconductor production processes?
Original Abstract Submitted
a structure includes a p-doped thin layer and an oxide high-k gate dielectric layer doped with cd, as, cr, pd, sc, v, sn, mo, mn, ti, ge, ag, ni, in, or ga within a fractional (x) limit 0<x<0.25, wherein the thin layer has a thickness of 10 nm or less, and another structure includes a p-doped transition metal dichalcogenide layer with a binary oxide high-k gate dielectric layer doped with v, sn, mo, mn, ti, ge, ag, ni, in, or ga within a fractional (x) limit 0<x<0.2. a method for p-doping a thin layer includes doping an oxide high-k gate dielectric layer with cd, as, cr, pd, sc, v, sn, mo, mn, ti, ge, ag, ni, in, or ga within a fractional (x) limit 0<x<0.25 to thereby p-dope the thin layer by surface charge transfer doping, wherein the thin layer has a thickness of 10 nm or less.
