Samsung electronics co., ltd. (20240347455). SEMICONDUCTOR DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME simplified abstract
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SEMICONDUCTOR DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME
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SEMICONDUCTOR DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240347455 titled 'SEMICONDUCTOR DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME
The semiconductor device described in the abstract includes a first conductive pattern with a first connection part and multiple first branch parts, a second conductive pattern with a second connection part and multiple second branch parts, a first memory channel structure, and a gate cutting pattern.
- The first and second conductive patterns are spaced apart from each other.
- The first memory channel structure is in contact with corresponding first and second branch parts.
- The gate cutting pattern is in contact with the second branch part and the first connection part.
Potential Applications: This technology could be used in the development of advanced semiconductor devices for various electronic applications.
Problems Solved: This innovation addresses the need for efficient and reliable semiconductor devices with improved memory channel structures.
Benefits: The benefits of this technology include enhanced performance and functionality of semiconductor devices, leading to better overall electronic systems.
Commercial Applications: This technology has potential commercial applications in the semiconductor industry, particularly in the production of high-performance electronic devices.
Prior Art: Prior research in the field of semiconductor devices and memory channel structures may provide valuable insights into the development of this technology.
Frequently Updated Research: Researchers are continually exploring new ways to optimize semiconductor devices and memory channel structures for improved performance and functionality.
Questions about Semiconductor Devices: 1. How does this technology improve the efficiency of semiconductor devices? 2. What are the potential future advancements in semiconductor device technology?
Original Abstract Submitted
a semiconductor device including a first conductive pattern having a first connection part and a plurality of first branch parts connected to the first connection part, a second conductive pattern having a second connection part and a plurality of second branch parts connected to the second connection part, a first memory channel structure in contact with a corresponding one of the first branch parts and a corresponding one of the second branch parts, and a gate cutting pattern in contact with the corresponding one of the second branch parts and the first connection part may be provided. the first conductive pattern and the second conductive pattern may be spaced apart from each other.
