Samsung electronics co., ltd. (20240347424). SEMICONDUCTOR DEVICES simplified abstract

SEMICONDUCTOR DEVICES

Organization Name

samsung electronics co., ltd.

Inventor(s)

Hongsik Shin of Suwon-si (KR)

Kyongbeom Koh of Suwon-si (KR)

Eunkyung Ko of Suwon-si (KR)

Hyonwook Ra of Suwon-si (KR)

Dongsoo Seo of Suwon-si (KR)

Jeongyeon Seo of Suwon-si (KR)

Kwangyong Yang of Suwon-si (KR)

SEMICONDUCTOR DEVICES - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240347424 titled 'SEMICONDUCTOR DEVICES

The semiconductor device described in the abstract includes various components such as an active region, gate structure, source/drain region, contact structure, device isolation layer, interlayer insulating layer, vertical power structure, rear power structure, vertical insulating film, and rear insulating film.

• The active region extends in a first direction.
• The gate structure extends in a second direction on the active region.
• The source/drain region is located on the active region and at least one side of the gate structure.
• A contact structure is positioned on the source/drain region.
• A device isolation layer surrounds the active region.
• An interlayer insulating layer covers the device isolation layer, gate structure, and source/drain region.
• A vertical power structure penetrates through the device isolation and interlayer insulating layers and connects to the contact structure.
• A rear power structure is electrically connected to the vertical power structure and surrounds the lower surface and a portion of a side surface of the vertical power structure.
• A vertical insulating film separates the vertical power structure from the rear power structure.
• A rear insulating film covers a side of the rear power structure.

Potential Applications: - Power semiconductor devices - Integrated circuits - Electronics manufacturing

Problems Solved: - Efficient power distribution - Enhanced device performance - Improved power management

Benefits: - Increased power efficiency - Better heat dissipation - Enhanced overall device reliability

Commercial Applications: Title: "Advanced Power Semiconductor Device for Enhanced Performance" This technology can be utilized in various industries such as telecommunications, automotive, and renewable energy for improved power management and performance.

Questions about the technology: 1. How does the vertical power structure contribute to the overall efficiency of the semiconductor device? 2. What are the key advantages of the rear power structure in terms of power distribution and heat dissipation?

Original Abstract Submitted

a semiconductor device may include an active region extending in a first direction; a gate structure extending in a second direction on the active region; a source/drain region on the active region and disposed at least one side of the gate structure; a contact structure on the source/drain region; a device isolation layer surrounding the active region; an interlayer insulating layer on the device isolation layer, the gate structure, and the source/drain region; a vertical power structure penetrating through the device isolation and interlayer insulating layers and connected to the contact structure; a rear power structure electrically connected to the vertical power structure and surrounding an entirety of a lower surface and a portion of a side surface of the vertical power structure; a vertical insulating film between the vertical power structure and the rear power structure; and a rear insulating film covering a side of the rear power structure.