Samsung electronics co., ltd. (20240347104). MEMORY DEVICE AND OPERATION TO REDUCE IMPACT OF PARASITIC WIRE RESISTANCE AND CAPACITANCE simplified abstract

MEMORY DEVICE AND OPERATION TO REDUCE IMPACT OF PARASITIC WIRE RESISTANCE AND CAPACITANCE

Organization Name

samsung electronics co., ltd.

Inventor(s)

Lava Kumar Pulluru of Bengaluru (IN)

Manish Chandra Joshi of Bengaluru (IN)

Parvinder Kumar Rana of Bengaluru (IN)

Poornima Venkatasubramanian of Bengaluru (IN)

Ved Prakash of Bengaluru (IN)

Chaitanya Vavilla of Bengaluru (IN)

MEMORY DEVICE AND OPERATION TO REDUCE IMPACT OF PARASITIC WIRE RESISTANCE AND CAPACITANCE - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240347104 titled 'MEMORY DEVICE AND OPERATION TO REDUCE IMPACT OF PARASITIC WIRE RESISTANCE AND CAPACITANCE

Simplified Explanation

The patent application describes a memory device that reduces the impact of parasitic wire resistance and capacitance by enabling circuits to speed up signal transitions on long metal lines.

• A sense circuit in the signal boosting circuit detects signal transitions on the metal line.
• The pull-up and pull-down circuits in the signal boosting circuit are activated to accelerate the signal transitions.
• The duration of operation of the pull-up and pull-down circuits can be controlled with a control signal.

Key Features and Innovation

• Sense circuit detects signal transitions on metal lines.
• Pull-up and pull-down circuits speed up signal transitions.
• Control signal regulates the operation of the circuits.

Potential Applications

This technology can be applied in memory devices, integrated circuits, and other electronic systems where reducing the impact of parasitic wire resistance and capacitance is crucial.

Problems Solved

• Reducing the impact of parasitic wire resistance and capacitance in memory devices.
• Speeding up signal transitions on long metal lines.

Benefits

• Improved performance and reliability of memory devices.
• Enhanced signal integrity in electronic systems.
• Efficient operation in high-speed applications.

Commercial Applications

Memory device manufacturers can integrate this technology to enhance the speed and efficiency of their products, catering to the demand for faster and more reliable electronic devices in various industries.

Prior Art

Readers can explore prior patents related to memory devices, signal boosting circuits, and techniques for reducing parasitic effects in electronic systems to gain a deeper understanding of the technological advancements in this field.

Frequently Updated Research

Researchers are continuously exploring ways to optimize signal processing in memory devices and electronic systems to meet the increasing demands for faster and more efficient technology solutions.

Questions about Memory Device Technology

How does this technology improve the performance of memory devices?

This technology improves performance by reducing the impact of parasitic wire resistance and capacitance, leading to faster signal transitions and enhanced signal integrity.

What are the potential applications of this innovation beyond memory devices?

This innovation can be applied in various electronic systems where reducing parasitic effects on signal transmission is essential for improving performance and reliability.

Original Abstract Submitted

a memory device and its operation reduce the impact of a parasitic wire resistance and capacitance (rc) in the memory device. at least one of a rise transition and a fall transition of a signal transmitted by a long metal line is sensed by a sense circuit of a signal boosting circuit. at least one of a pull up (pu) circuit and a pull down (pd) circuit of the signal boosting circuit is enabled to speed-up one or both of the rise transition and the fall transition of the signal transmitted by the long metal line. the duration of an operation of one of the pu circuit and the pd circuit may be controlled using a control signal.