Intel corporation (20240347610). CONTACT RESISTANCE REDUCTION IN TRANSISTOR DEVICES WITH METALLIZATION ON BOTH SIDES simplified abstract

CONTACT RESISTANCE REDUCTION IN TRANSISTOR DEVICES WITH METALLIZATION ON BOTH SIDES

Organization Name

intel corporation

Inventor(s)

Koustav Ganguly of Beaverton OR (US)

Ryan Keech of Portland OR (US)

Subrina Rafique of Hillsboro OR (US)

Glenn A. Glass of Portland OR (US)

Anand S. Murthy of Portland OR (US)

Ehren Mannebach of Beaverton OR (US)

Mauro Kobrinsky of Portland OR (US)

Gilbert Dewey of Beaverton OR (US)

CONTACT RESISTANCE REDUCTION IN TRANSISTOR DEVICES WITH METALLIZATION ON BOTH SIDES - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240347610 titled 'CONTACT RESISTANCE REDUCTION IN TRANSISTOR DEVICES WITH METALLIZATION ON BOTH SIDES

Simplified Explanation: The patent application describes a transistor device with semiconductor channels, source/drain regions, and source/drain contacts.

• The transistor device includes a stack of semiconductor channels with source/drain regions on each end.
• The source/drain regions have top and bottom surfaces.
• Source/drain contacts are electrically coupled to the top and bottom surfaces of the source/drain regions.
• The second source/drain contact is separated from the second source/drain region by an interfacial layer.

Key Features and Innovation:

• Transistor device with semiconductor channels and source/drain regions.
• Source/drain contacts electrically coupled to the source/drain regions.
• Interfacial layer separating the second source/drain contact from the second source/drain region.

Potential Applications: The technology can be used in the semiconductor industry for advanced transistor devices in electronic devices.

Problems Solved: The technology addresses the need for improved transistor devices with efficient source/drain contacts.

Benefits:

• Enhanced performance of transistor devices.
• Improved electrical coupling in semiconductor channels.

Commercial Applications: Potential commercial applications include the production of high-performance electronic devices such as smartphones, computers, and other consumer electronics.

Prior Art: Readers can explore prior patents related to transistor devices, semiconductor channels, and source/drain contacts in the semiconductor industry.

Frequently Updated Research: Stay informed about the latest advancements in transistor technology and semiconductor materials for improved device performance.

Questions about Transistor Devices: 1. How do the source/drain contacts improve the performance of the transistor device? 2. What materials are commonly used for the semiconductor channels in advanced transistor devices?

Original Abstract Submitted

embodiments disclosed herein include transistor devices and methods of making such devices. in an embodiment, the transistor device comprises a stack of semiconductor channels with a first source/drain region on a first end of the semiconductor channels and a second source/drain region on a second end of the semiconductor channels. in an embodiment, the first source/drain region and the second source/drain region have a top surface and a bottom surface. in an embodiment, the transistor device further comprises a first source/drain contact electrically coupled to the top surface of the first source/drain region, and a second source/drain contact electrically coupled to the bottom surface of the second source/drain region. in an embodiment, the second source/drain contact is separated from the second source/drain region by an interfacial layer.