Intel corporation (20240347595). Cavity Spacer for Nanowire Transistors simplified abstract

Cavity Spacer for Nanowire Transistors

Organization Name

intel corporation

Inventor(s)

William Hsu of Hillsboro OR (US)

Biswajeet Guha of Hillsboro OR (US)

Leonard Guler of Hillsboro OR (US)

Souvik Chakrabarty of Hillsboro OR (US)

Jun Sung Kang of Portland OR (US)

Bruce Beattie of Portland OR (US)

Tahir Ghani of Portland OR (US)

Cavity Spacer for Nanowire Transistors - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240347595 titled 'Cavity Spacer for Nanowire Transistors

The transistor structure described in the abstract consists of a base and a body made of semiconductor material, with a gate structure wrapped around the body. The gate structure includes a gate electrode and a dielectric layer. The source is in contact with one end of the body, and the drain is in contact with the other end.

• The transistor structure includes a body with a gate structure wrapped around it, providing control over the flow of current.
• The gate structure consists of a gate electrode and a dielectric layer, enhancing the efficiency of the transistor.
• The source and drain are in contact with the ends of the body, allowing for the flow of current through the transistor.
• Spacer materials are strategically placed around the gate electrode and under the body, optimizing the performance of the transistor.
• The design of the transistor structure aims to improve functionality and efficiency in electronic devices.

Potential Applications: - This technology can be used in integrated circuits for various electronic devices. - It can be applied in power amplifiers, sensors, and other electronic components.

Problems Solved: - Provides better control over the flow of current in electronic devices. - Enhances the efficiency and performance of transistors in electronic circuits.

Benefits: - Improved functionality and efficiency in electronic devices. - Enhanced control over the flow of current, leading to better performance.

Commercial Applications: Title: Advanced Transistor Structure for Enhanced Electronic Device Performance This technology can be utilized in the manufacturing of smartphones, computers, and other electronic devices, improving their overall performance and efficiency. The market implications include increased demand for high-performance electronic components in various industries.

Questions about the technology: 1. How does the gate structure wrapped around the body improve the performance of the transistor? 2. What are the specific benefits of using spacer materials in the transistor structure?

Original Abstract Submitted

a transistor structure includes a base and a body over the base. the body comprises a semiconductor material and has a first end portion and a second end portion. a gate structure is wrapped around the body between the first end portion and the second end portion, where the gate structure includes a gate electrode and a dielectric between the gate electrode and the body. a source is in contact with the first end portion and a drain is in contact with the second end portion. a first spacer material is on opposite sides of the gate electrode and above the first end portion. a second spacer material is adjacent the gate structure and under the first end portion of the nanowire body. the second spacer material is below and in contact with a bottom surface of the source and the drain.