Intel corporation (20240347539). INTEGRATED CIRCUIT STRUCTURES HAVING CUT METAL GATES simplified abstract
Contents
INTEGRATED CIRCUIT STRUCTURES HAVING CUT METAL GATES
Organization Name
Inventor(s)
Tahir Ghani of Portland OR (US)
Mohit K. Haran of Hillsboro OR (US)
Mohammad Hasan of Aloha OR (US)
Biswajeet Guha of Hillsboro OR (US)
Alison V. Davis of Portland OR (US)
Leonard P. Guler of Hillsboro OR (US)
INTEGRATED CIRCUIT STRUCTURES HAVING CUT METAL GATES - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240347539 titled 'INTEGRATED CIRCUIT STRUCTURES HAVING CUT METAL GATES
Simplified Explanation: The patent application describes integrated circuit structures with cut metal gates and methods of fabricating them.
Key Features and Innovation:
- Integrated circuit structure includes a fin protruding above a shallow trench isolation structure.
- Gate dielectric material layer is over the fin and the STI structure.
- Conductive gate layer and gate fill material are also present.
- Dielectric gate plug is laterally spaced apart from the fin.
- Gate dielectric material layer and conductive gate layer are not along the sides of the dielectric gate plug.
Potential Applications: This technology can be used in the manufacturing of advanced integrated circuits for various electronic devices.
Problems Solved: This technology addresses the need for more efficient and precise fabrication of integrated circuit structures with cut metal gates.
Benefits:
- Improved performance and efficiency of integrated circuits.
- Enhanced precision in the fabrication process.
- Potential cost savings in manufacturing.
Commercial Applications: The technology can be applied in the semiconductor industry for the production of high-performance electronic devices, leading to advancements in computing, communication, and other technology sectors.
Prior Art: Readers can explore prior patents related to integrated circuit structures and gate fabrication processes to understand the evolution of this technology.
Frequently Updated Research: Stay updated on the latest advancements in integrated circuit fabrication techniques and materials to enhance the efficiency and performance of electronic devices.
Questions about Integrated Circuit Structures with Cut Metal Gates: 1. What are the potential challenges in implementing this technology in large-scale production? 2. How does this innovation compare to traditional methods of fabricating integrated circuit structures?
Original Abstract Submitted
integrated circuit structures having cut metal gates, and methods of fabricating integrated circuit structures having cut metal gates, are described. for example, an integrated circuit structure includes a fin having a portion protruding above a shallow trench isolation (sti) structure. a gate dielectric material layer is over the protruding portion of the fin and over the sti structure. a conductive gate layer is over the gate dielectric material layer. a conductive gate fill material is over the conductive gate layer. a dielectric gate plug is laterally spaced apart from the fin, the dielectric gate plug on but not through the sti structure. the gate dielectric material layer and the conductive gate layer are not along sides of the dielectric gate plug, and the conductive gate fill material is in contact with the sides of the dielectric gate plug.
