Intel corporation (20240347394). INTEGRATED CIRCUITS WITH RECESSED GATE ELECTRODES simplified abstract
Contents
INTEGRATED CIRCUITS WITH RECESSED GATE ELECTRODES
Organization Name
Inventor(s)
Srijit Mukherjee of Portland OR (US)
Christopher J. Wiegand of Portland OR (US)
Tyler J. Weeks of Hillsboro OR (US)
Mark Y. Liu of West Linn OR (US)
Michael L. Hattendorf of Portland OR (US)
INTEGRATED CIRCUITS WITH RECESSED GATE ELECTRODES - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240347394 titled 'INTEGRATED CIRCUITS WITH RECESSED GATE ELECTRODES
Simplified Explanation: The patent application describes integrated circuits with MOSFETs that have selectively recessed gate electrodes, reducing capacitive coupling area to adjacent source and drain contact metallization.
- Transistors with recessed gate electrodes have reduced capacitive coupling area.
- Analog circuits use transistors with gate electrodes of a given z-height, while logic gates use transistors with recessed gate electrodes of lesser z-height.
- Subsets of gate electrodes are selectively etched back to differentiate the height based on the transistor's application within a circuit.
Key Features and Innovation:
- Integrated circuits with MOSFETs featuring selectively recessed gate electrodes.
- Transistors with reduced capacitive coupling area to adjacent source and drain contact metallization.
- Differentiated gate electrode heights based on the transistor's application within a circuit.
Potential Applications: The technology can be used in various analog and logic circuits, where reducing capacitive coupling area is crucial for performance.
Problems Solved:
- Reduced capacitive coupling area to adjacent source and drain contact metallization.
- Differentiated gate electrode heights for specific applications within a circuit.
Benefits:
- Improved performance in integrated circuits.
- Enhanced functionality in analog and logic circuits.
- Better control over capacitive coupling effects.
Commercial Applications: Potential commercial applications include semiconductor manufacturing, electronics, and telecommunications industries.
Prior Art: Readers can explore prior art related to integrated circuits, MOSFETs, and gate electrode design in semiconductor technology.
Frequently Updated Research: Stay updated on the latest advancements in semiconductor technology, particularly in gate electrode design and integrated circuit performance.
Questions about Integrated Circuits with Selectively Recessed Gate Electrodes: 1. What are the key advantages of using transistors with recessed gate electrodes in integrated circuits? 2. How does the differentiation of gate electrode heights improve circuit performance in specific applications?
Original Abstract Submitted
integrated circuits including mosfets with selectively recessed gate electrodes. transistors having recessed gate electrodes with reduced capacitive coupling area to adjacent source and drain contact metallization are provided alongside transistors with gate electrodes that are non-recessed and have greater z-height. in embodiments, analog circuits employ transistors with gate electrodes of a given z-height while logic gates employ transistors with recessed gate electrodes of lesser z-height. in embodiments, subsets of substantially planar gate electrodes are selectively etched back to differentiate a height of the gate electrode based on a given transistor's application within a circuit.
