Taiwan semiconductor manufacturing company, ltd. (20240341200). MEMORY STRUCTURE WITH FERROMAGNETIC ELECTRODE simplified abstract
Contents
MEMORY STRUCTURE WITH FERROMAGNETIC ELECTRODE
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Wei-Jen Chen of Tainan City (TW)
Ya-Jui Tsou of Taichung City (TW)
Chee-Wee Liu of Taipei City (TW)
Shao-Yu Lin of Taichung City (TW)
Chih-Lin Wang of Hsinchu County (TW)
MEMORY STRUCTURE WITH FERROMAGNETIC ELECTRODE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240341200 titled 'MEMORY STRUCTURE WITH FERROMAGNETIC ELECTRODE
The memory structure described in the patent application consists of a dielectric layer, two ferromagnetic bottom electrodes, an SOT channel layer, and an MTJ structure. The first ferromagnetic bottom electrode extends through the dielectric layer, while the second ferromagnetic bottom electrode is spaced apart from the first one. The SOT channel layer extends between the two ferromagnetic bottom electrodes, and the MTJ structure is located on top of the SOT channel layer.
- The memory structure includes a dielectric layer, two ferromagnetic bottom electrodes, an SOT channel layer, and an MTJ structure.
- The first ferromagnetic bottom electrode extends through the dielectric layer, while the second one is spaced apart from it.
- The SOT channel layer connects the two ferromagnetic bottom electrodes.
- The MTJ structure is positioned on top of the SOT channel layer.
Potential Applications: - This memory structure could be used in various electronic devices such as computers, smartphones, and IoT devices. - It could also find applications in data storage systems and magnetic sensors.
Problems Solved: - The memory structure provides a compact and efficient way to store and retrieve data. - It offers improved performance and reliability compared to traditional memory structures.
Benefits: - Enhanced data storage capabilities. - Improved efficiency and reliability. - Compact design suitable for various electronic devices.
Commercial Applications: Title: Advanced Memory Structure for Electronic Devices This technology could be utilized in the development of next-generation electronic devices, improving their performance and storage capabilities. The market implications include increased demand for more efficient and reliable memory solutions in various industries.
Questions about Memory Structure: 1. How does the memory structure improve data storage efficiency? The memory structure enhances data storage efficiency by providing a compact design with improved performance and reliability. 2. What are the potential applications of this memory structure in the electronics industry? The memory structure can be used in a wide range of electronic devices, including computers, smartphones, and IoT devices, as well as data storage systems and magnetic sensors.
Original Abstract Submitted
a memory structure comprises a dielectric layer, a first ferromagnetic bottom electrode, a second ferromagnetic bottom electrode, an sot channel layer, and an mtj structure. the dielectric layer is over the substrate. the first ferromagnetic bottom electrode extends through the dielectric layer. the second ferromagnetic bottom electrode extends through the dielectric layer, and is spaced apart from the first ferromagnetic bottom electrode. the sot channel layer extends from the first ferromagnetic bottom electrode to the second ferromagnetic bottom electrode. the mtj structure is over the sot channel layer.
