Taiwan semiconductor manufacturing company, ltd. (20240339555). SEMICONDUCTOR SENSOR AND METHODS THEREOF simplified abstract

SEMICONDUCTOR SENSOR AND METHODS THEREOF

Organization Name

taiwan semiconductor manufacturing company, ltd.

Inventor(s)

Yin-Kai Liao of Taipei City (TW)

Jen-Cheng Liu of Hsin-Chu City (TW)

Kuan-Chieh Huang of Hsinchu City (TW)

Chih-Ming Hung of Changhua County (TW)

Yi-Shin Chu of Hsinchu City (TW)

Hsiang-Lin Chen of Hsinchu (TW)

Sin-Yi Jiang of Hsinchu City (TW)

SEMICONDUCTOR SENSOR AND METHODS THEREOF - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240339555 titled 'SEMICONDUCTOR SENSOR AND METHODS THEREOF

The abstract describes a method and structure for an optical sensor with an optimized Ge-Si interface, involving the formation of a trench, a doped semiconductor layer, and a germanium layer within the trench to create the sensor.

• Formation of a trench within the pixel region of a substrate
• Creation of a doped semiconductor layer along the trench's sidewalls and bottom surface
• Deposition of a germanium layer within the trench
• Formation of an optical sensor within the germanium layer

Potential Applications: - Optical sensors in various electronic devices - Imaging systems - Biomedical devices

Problems Solved: - Enhancing the performance of optical sensors - Improving the interface between germanium and silicon materials

Benefits: - Increased sensitivity and efficiency of optical sensors - Enhanced image quality in imaging systems - Better performance in biomedical applications

Commercial Applications: Optical sensors with optimized Ge-Si interfaces can be used in smartphones, cameras, medical devices, and other electronic systems, improving their overall performance and functionality.

Questions about the technology: 1. How does the optimized Ge-Si interface improve the performance of optical sensors? 2. What are the potential challenges in scaling up the production of optical sensors with this structure?

Frequently Updated Research: Researchers are continually exploring new materials and structures to further enhance the performance of optical sensors, including advancements in germanium-silicon interfaces and semiconductor technologies.

Original Abstract Submitted

a method and structure providing an optical sensor having an optimized ge—si interface includes providing a substrate having a pixel region and a logic region. in some embodiments, the method further includes forming a trench within the pixel region. in various examples, and after forming the trench, the method further includes forming a doped semiconductor layer along sidewalls and along a bottom surface of the trench. in some embodiments, the method further includes forming a germanium layer within the trench and over the doped semiconductor layer. in some examples, and after forming the germanium layer, the method further includes forming an optical sensor within the germanium layer.