Taiwan semiconductor manufacturing company, ltd. (20240339542). Semiconductor Devices Including Backside Vias and Methods of Forming the Same simplified abstract
Contents
Semiconductor Devices Including Backside Vias and Methods of Forming the Same
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Wei-Yang Lee of Taipei City (TW)
Chia-Pin Lin of Xinpu Township (TW)
Yuan-Ching Peng of Hsinchu (TW)
Semiconductor Devices Including Backside Vias and Methods of Forming the Same - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240339542 titled 'Semiconductor Devices Including Backside Vias and Methods of Forming the Same
Simplified Explanation: The patent application describes semiconductor devices with backside vias featuring enlarged backside portions, along with methods for their formation.
Key Features and Innovation:
- First transistor structure in a device layer
- Front-side interconnect structure on the front side of the device layer
- Dielectric layer on the backside of the device layer
- Contact extending through the dielectric layer to a source/drain region
- Backside interconnect structure on the backside of the dielectric layer and contact
Potential Applications: This technology can be applied in the semiconductor industry for the development of advanced devices with improved performance and reliability.
Problems Solved: The technology addresses the need for enhanced connectivity and efficiency in semiconductor devices, particularly in the context of backside vias.
Benefits:
- Improved device performance
- Enhanced reliability
- Increased efficiency in semiconductor manufacturing processes
Commercial Applications: The technology has potential commercial applications in the production of high-performance electronic devices, leading to advancements in various industries such as telecommunications, computing, and consumer electronics.
Prior Art: Readers can explore prior art related to backside vias, semiconductor device interconnect structures, and dielectric layer technologies in the semiconductor industry.
Frequently Updated Research: Researchers are continually exploring new methods and materials for enhancing semiconductor device performance and reliability, which may be relevant to this technology.
Questions about Semiconductor Devices with Backside Vias: 1. What are the key advantages of using backside vias in semiconductor devices? 2. How does the design of backside vias impact the overall performance of semiconductor devices?
Original Abstract Submitted
semiconductor devices including backside vias with enlarged backside portions and methods of forming the same are disclosed. in an embodiment, a device includes a first transistor structure in a first device layer; a front-side interconnect structure on a front-side of the first device layer; a first dielectric layer on a backside of the first device layer; a first contact extending through the first dielectric layer to a source/drain region of the first transistor structure; and a backside interconnect structure on a backside of the first dielectric layer and the first contact, the first contact including a first portion having first tapered sidewalls and a second portion having second tapered sidewalls, widths of the first tapered sidewalls narrowing in a direction towards the backside interconnect structure, and widths of the second tapered sidewalls widening in a direction towards the backside interconnect structure.
