Taiwan semiconductor manufacturing company, ltd. (20240339539). Contact for Semiconductor Device and Method of Forming Thereof simplified abstract
Contents
Contact for Semiconductor Device and Method of Forming Thereof
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Contact for Semiconductor Device and Method of Forming Thereof - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240339539 titled 'Contact for Semiconductor Device and Method of Forming Thereof
Simplified Explanation: The semiconductor device described in the patent application includes a first gate electrode, a first conductive contact, an etch stop layer (ESL), and a second conductive contact. The first conductive contact is wider than the second conductive contact, and the ESL overhangs a portion of the second conductive contact. The bottom surface of the second conductive contact physically contacts the top surface of the first conductive contact.
- The semiconductor device comprises a unique structure with different widths of conductive contacts.
- The ESL acts as an etch stop layer to protect the underlying layers during fabrication.
- The physical contact between the bottom and top surfaces of the conductive contacts ensures proper functionality.
Potential Applications: 1. Semiconductor manufacturing processes. 2. Integrated circuit fabrication. 3. Electronic device production.
Problems Solved: 1. Ensures proper contact between different layers in a semiconductor device. 2. Prevents damage to underlying layers during fabrication. 3. Enhances the performance and reliability of semiconductor devices.
Benefits: 1. Improved functionality of semiconductor devices. 2. Enhanced durability and longevity. 3. Streamlined manufacturing processes.
Commercial Applications: The technology can be utilized in the production of various electronic devices, leading to more efficient and reliable products in the market.
Prior Art: Readers can explore prior patents related to semiconductor device fabrication processes and conductive contact structures to gain a deeper understanding of the existing technology landscape.
Frequently Updated Research: Stay updated on the latest advancements in semiconductor manufacturing techniques and materials to further enhance the performance of semiconductor devices.
Questions about Semiconductor Device Fabrication: 1. How does the width difference between the first and second conductive contacts impact the performance of the semiconductor device? 2. What are the potential challenges in implementing this unique structure in large-scale semiconductor manufacturing processes?
Original Abstract Submitted
a semiconductor device comprises a first gate electrode on a substrate, a first conductive contact on the first gate electrode, an etch stop layer (esl) on the first conductive contact, and a second conductive contact extending through the esl. the first conductive contact has a first width. the second conductive contact has a second width, the second width being smaller than the first width. the esl overhangs a portion of the second conductive contact. a convex bottom surface of the second conductive contact physically contacts a concave top surface of the first conductive contact.
