Taiwan semiconductor manufacturing company, ltd. (20240339537). THIN-SHEET FINFET DEVICE simplified abstract
Contents
THIN-SHEET FINFET DEVICE
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Martin Christopher Holland of Bertem (BE)
Matthias Passlack of Huldenberg (BE)
THIN-SHEET FINFET DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240339537 titled 'THIN-SHEET FINFET DEVICE
The semiconductor device described in the abstract features a fin protruding upwardly from a substrate, with a two-dimensional material layer on the first and second sidewalls of the fin, and a gate stack on the fin that contacts a channel region defined in the two-dimensional material layer.
- The semiconductor device includes a fin with a two-dimensional material layer on the sidewalls but not on the top surface.
- The gate stack is positioned on the fin and contacts a channel region in the two-dimensional material layer.
- The two-dimensional material layer has a flat portion extending laterally away from the fin.
- The device is designed to optimize performance and efficiency in semiconductor applications.
- This innovation allows for precise control and manipulation of electrical currents within the device.
Potential Applications: - This technology can be applied in the development of advanced semiconductor devices for various electronic applications. - It can enhance the performance and efficiency of integrated circuits in electronic devices.
Problems Solved: - Provides improved control and manipulation of electrical currents in semiconductor devices. - Enhances the overall performance and efficiency of electronic devices.
Benefits: - Increased performance and efficiency in semiconductor applications. - Enhanced control and manipulation of electrical currents. - Potential for advancements in electronic device technology.
Commercial Applications: Title: Advanced Semiconductor Device Technology for Enhanced Performance This technology can be utilized in the development of high-performance electronic devices such as smartphones, computers, and other consumer electronics. It can also have applications in industrial and automotive electronics, enhancing efficiency and functionality.
Questions about Semiconductor Device Technology: 1. How does the two-dimensional material layer on the fin contribute to the performance of the semiconductor device? - The two-dimensional material layer on the fin allows for precise control of electrical currents and enhances the overall efficiency of the device.
2. What advantages does the gate stack provide in terms of optimizing the performance of the semiconductor device? - The gate stack plays a crucial role in controlling the flow of electrical currents within the device, leading to improved performance and efficiency.
Original Abstract Submitted
a semiconductor device includes a fin protruding upwardly from a substrate. the fin includes a first sidewall and an opposing second sidewall and a top surface extending between the first and second sidewalls. the semiconductor device also includes a two-dimensional material layer disposed on the first and second sidewalls of the fin without being disposed on the top surface of the fin, and a gate stack disposed on the fin. the gate stack contacts a channel region defined in the two-dimensional material layer. the two-dimensional material layer includes a flat portion extending laterally away from the fin.
