Taiwan semiconductor manufacturing company, ltd. (20240339525). SOURCE/DRAIN STRUCTURE FOR SEMICONDUCTOR DEVICE simplified abstract
Contents
SOURCE/DRAIN STRUCTURE FOR SEMICONDUCTOR DEVICE
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
SOURCE/DRAIN STRUCTURE FOR SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240339525 titled 'SOURCE/DRAIN STRUCTURE FOR SEMICONDUCTOR DEVICE
The present disclosure describes a semiconductor structure and a method for forming the same. The method involves creating a recess structure in a substrate and then forming a first semiconductor layer over the recess structure. This first semiconductor layer is doped with a first n-type dopant in two different portions, with the second portion having a higher doping concentration than the first portion. Additionally, a second semiconductor layer is formed over the second portion of the first semiconductor layer, which is doped with a second n-type dopant.
- Formation of a recess structure in a substrate
- Doping of first semiconductor layer with a first n-type dopant in two portions with different doping concentrations
- Formation of a second semiconductor layer over the second portion of the first semiconductor layer
- Doping of the second semiconductor layer with a second n-type dopant
- Overall method for creating a semiconductor structure
Potential Applications: - Semiconductor manufacturing - Electronics industry - Integrated circuit production
Problems Solved: - Enhancing semiconductor performance - Improving conductivity in semiconductor devices
Benefits: - Increased efficiency in semiconductor devices - Enhanced overall performance - Improved functionality in electronic applications
Commercial Applications: Title: Advanced Semiconductor Manufacturing Process This technology can be utilized in the production of various electronic devices, such as smartphones, computers, and other consumer electronics. The improved semiconductor structure can lead to more reliable and high-performance products, attracting a wide range of industries looking to enhance their electronic devices.
Questions about Semiconductor Structure: 1. How does the doping process affect the performance of the semiconductor structure? 2. What are the potential challenges in implementing this method in large-scale semiconductor production?
Frequently Updated Research: Researchers are constantly exploring new doping techniques and materials to further improve semiconductor performance and efficiency. Stay updated on the latest advancements in semiconductor manufacturing to ensure the most cutting-edge technology is being utilized.
Original Abstract Submitted
the present disclosure describes a semiconductor structure and a method for forming the same. the method can include forming a recess structure in a substrate and forming a first semiconductor layer over the recess structure. the process of forming the first semiconductor layer can include doping first and second portions of the first semiconductor layer with a first n-type dopant having first and second doping concentrations, respectively. the second doping concentration can be greater than the first doping concentration. the method can further include forming a second semiconductor layer over the second portion of the first semiconductor layer. the process of forming the second semiconductor layer can include doping the second semiconductor layer with a second n-type dopant.
