Taiwan semiconductor manufacturing company, ltd. (20240339446). EMBEDDED CLAMPING DIODE TO IMPROVE DEVICE RUGGEDNESS simplified abstract
Contents
- 1 EMBEDDED CLAMPING DIODE TO IMPROVE DEVICE RUGGEDNESS
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 EMBEDDED CLAMPING DIODE TO IMPROVE DEVICE RUGGEDNESS - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Key Features and Innovation
- 1.6 Potential Applications
- 1.7 Problems Solved
- 1.8 Benefits
- 1.9 Commercial Applications
- 1.10 Prior Art
- 1.11 Frequently Updated Research
- 1.12 Questions about LDMOS Transistor with Embedded Diode
- 1.13 Original Abstract Submitted
EMBEDDED CLAMPING DIODE TO IMPROVE DEVICE RUGGEDNESS
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Yu-Ying Lai of Changhua County (TW)
Po-Chih Su of New Taipei City (TW)
Ruey-Hsin Liu of Hsin-Chu (TW)
EMBEDDED CLAMPING DIODE TO IMPROVE DEVICE RUGGEDNESS - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240339446 titled 'EMBEDDED CLAMPING DIODE TO IMPROVE DEVICE RUGGEDNESS
Simplified Explanation
A diode is embedded under a drain region of an LDMOS transistor to prevent damage from voltage overshoot in a power switching circuit operating at high speeds.
- The embedded diode is heavily doped to lower the breakdown voltage of the LDMOS transistor.
Key Features and Innovation
- Embedding a diode under the drain region of the LDMOS transistor.
- Heavily doping the diode to lower the breakdown voltage.
- Preventing damage from voltage overshoot in high-speed power switching circuits.
Potential Applications
This technology can be used in various power switching applications where voltage overshoot can occur, such as in high-speed electronic devices and power supplies.
Problems Solved
This technology addresses the issue of damage to LDMOS transistors from voltage overshoot in high-speed power switching circuits.
Benefits
- Increased reliability of power switching circuits.
- Extended lifespan of LDMOS transistors.
- Improved performance in high-speed applications.
Commercial Applications
Title: "Enhanced LDMOS Transistor for High-Speed Power Switching Circuits" This technology can be commercially applied in industries such as telecommunications, automotive, and industrial automation for more efficient and reliable power switching operations.
Prior Art
Readers can explore prior research on LDMOS transistors, diode embedding techniques, and voltage overshoot protection in power switching circuits to understand the background of this innovation.
Frequently Updated Research
Researchers are continually studying ways to enhance the performance and efficiency of power switching circuits, including advancements in semiconductor technology and circuit design.
Questions about LDMOS Transistor with Embedded Diode
1. How does embedding a diode under the drain region of an LDMOS transistor improve its performance? 2. What are the potential challenges in implementing this technology in high-speed power switching circuits?
Original Abstract Submitted
damage to an ldmos transistor from voltage overshoot in a power switching circuit operating at high switching speeds is prevented by embedding a diode under a drain region of the ldmos transistor. the embedded diode is doped more heavily than a drift region of the ldmos transistor and lowers a breakdown voltage of the ldmos transistor.
