Taiwan semiconductor manufacturing company, ltd. (20240339355). Air-Replaced Spacer for Self-Aligned Contact Scheme simplified abstract
Contents
Air-Replaced Spacer for Self-Aligned Contact Scheme
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Meng-Yu Lin of New Taipei City (TW)
Chung-Wei Wu of Ju-Bei City (TW)
Chun-Fu Cheng of Zhubei City (TW)
Air-Replaced Spacer for Self-Aligned Contact Scheme - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240339355 titled 'Air-Replaced Spacer for Self-Aligned Contact Scheme
The present disclosure describes a method of fabricating a semiconductor structure that includes several steps such as forming a dummy gate structure, spacers, source/drain structure, dielectric structure, metal gate structure, capping structure, and contact structure.
- Forming a dummy gate structure over a substrate
- Forming spacers on the sidewall of the dummy gate structure
- Forming a source/drain structure on the substrate
- Replacing the dummy gate structure with a metal gate structure and a capping structure
- Forming an opening in the dielectric structure to expose the source/drain structure
- Forming a dummy spacer on the sidewall of the opening
- Forming a contact structure in the opening
- Removing the dummy spacer to create an air gap between the contact structure and the metal gate structure
Potential Applications: - Semiconductor manufacturing - Integrated circuit fabrication - Advanced electronic devices
Problems Solved: - Enhancing the performance of semiconductor structures - Improving the efficiency of integrated circuits - Reducing signal interference in electronic devices
Benefits: - Increased speed and reliability of electronic devices - Enhanced functionality of semiconductor components - Improved overall performance of integrated circuits
Commercial Applications: Title: Advanced Semiconductor Fabrication Method for Enhanced Performance This technology can be used in the production of high-performance electronic devices such as smartphones, computers, and other consumer electronics. It can also benefit industries that rely on advanced semiconductor technology, such as telecommunications, automotive, and aerospace.
Questions about the technology: 1. How does the fabrication method described in the patent application improve the performance of semiconductor structures? 2. What are the potential cost implications of implementing this advanced fabrication process in semiconductor manufacturing?
Original Abstract Submitted
the present disclosure describes a method of fabricating a semiconductor structure that includes forming a dummy gate structure over a substrate, forming a first spacer on a sidewall of the dummy gate structure and a second spacer on the first spacer, forming a source/drain structure on the substrate, removing the second spacer, forming a dielectric structure over the source/drain structure, replacing the dummy gate structure with a metal gate structure and a capping structure on the metal gate structure, and forming an opening in the dielectric structure. the opening exposes the source/drain structure. the method further includes forming a dummy spacer on a sidewall of the opening, forming a contact structure in the opening, and removing the dummy spacer to form an air gap between the contact structure and the metal gate structure. the contact structure is in contact with the source/drain structure in the opening.
