Taiwan semiconductor manufacturing company, ltd. (20240339327). METHOD OF FORMING SEMICONDUCTOR DEVICE USING WET ETCHING CHEMISTRY simplified abstract

METHOD OF FORMING SEMICONDUCTOR DEVICE USING WET ETCHING CHEMISTRY

Organization Name

taiwan semiconductor manufacturing company, ltd.

Inventor(s)

Meng-Hsien Li of Hsinchu City (TW)

Ying-Chuen Wang of Taichung City (TW)

Chieh-Yi Shen of Taipei (TW)

Li-Min Chen of Hsinchu County (TW)

Ming-Hsi Yeh of Hsinchu (TW)

Kuo-Bin Huang of Hsinchu County (TW)

METHOD OF FORMING SEMICONDUCTOR DEVICE USING WET ETCHING CHEMISTRY - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240339327 titled 'METHOD OF FORMING SEMICONDUCTOR DEVICE USING WET ETCHING CHEMISTRY

Simplified Explanation: This patent application describes a wet etching chemistry used to selectively remove polymer residue on an opening embedded in a low-k dielectric layer and an underlying stop layer during the formation of an interconnect structure.

• The wet etching chemistry includes two types of organic solvents with a concentration of at least 70%, an alkali source amine (specifically a tertiary amine), an inhibitor, and water.
• The chemistry is designed to be free of peroxide to prevent damage to the WDC hard mask.

Key Features and Innovation:

• Selective removal of polymer residue on openings in low-k dielectric layers.
• Use of specific organic solvents and an alkali source amine for effective cleaning.
• Inhibition of damage to the WDC hard mask by avoiding the use of peroxide.

Potential Applications:

• Semiconductor manufacturing processes.
• Microelectronics fabrication.
• Nanotechnology applications.

Problems Solved:

• Residue removal in interconnect structures.
• Damage prevention to underlying layers during cleaning processes.

Benefits:

• Improved interconnect structure quality.
• Enhanced reliability of semiconductor devices.
• Cost-effective cleaning solution.

Commercial Applications:

• Advanced semiconductor manufacturing.
• Microelectronics industry.
• Nanotechnology research and development.

Questions about Wet Etching Chemistry: 1. How does the wet etching chemistry selectively remove polymer residue? 2. What are the specific benefits of using an alkali source amine in the cleaning process?

Original Abstract Submitted

a wet etching chemistry to selectively remove a polymer residue on an opening embedded in a low-k dielectric layer and an underlying stop layer in a process of forming an interconnect structure is provided. the wet etching chemistry includes: two type of organic solvents, wherein a concentration of the two type of organic solvents is greater than or equal to 70%; an alkali source amine, at least comprising a tertiary amine; an inhibitor; and water. in some embodiment, the wet etching chemistry is free of a peroxide to avoid damage to the wdc hard mask.