Taiwan semiconductor manufacturing company, ltd. (20240339320). CERAMIC SUBSTRATE STRUCTURES AND METHODS OF FORMING THE SAME simplified abstract
Contents
CERAMIC SUBSTRATE STRUCTURES AND METHODS OF FORMING THE SAME
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Chi-Ming Chen of Zhubei City (TW)
Chia-Shiung Tsai of Hsin-Chu (TW)
Chung-Yuan Li of Taichung City (TW)
CERAMIC SUBSTRATE STRUCTURES AND METHODS OF FORMING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240339320 titled 'CERAMIC SUBSTRATE STRUCTURES AND METHODS OF FORMING THE SAME
The abstract describes a patent application for a method using Surface Activated Bonding (SAB) to directly bond a silicon growth seed layer over an aluminum nitride substrate without an intervening oxide layer. This allows for epitaxy of gallium nitride without exacerbating the coefficient of thermal expansion (CTE) mismatch between silicon and gallium nitride, reducing defects in the gallium nitride and minimizing bowing and cracking of the substrate.
- Direct bonding of silicon growth seed layer over aluminum nitride substrate using SAB
- Growth seed layer may include P-Si(111) to enable epitaxy of gallium nitride
- Reduces defects in gallium nitride and minimizes substrate bowing and cracking
- Faster process compared to other techniques for forming growth seed layer
- Saves power, processing resources, and raw materials
Potential Applications: - Semiconductor devices - Optoelectronic devices - High-power and high-frequency electronic devices
Problems Solved: - Reducing defects in gallium nitride - Minimizing substrate bowing and cracking - Improving performance of electronic devices
Benefits: - Enhanced epitaxy of gallium nitride - Reduced substrate defects - Improved device performance
Commercial Applications: Title: Advanced Semiconductor Device Manufacturing Process This technology can be used in the production of various semiconductor devices, optoelectronic devices, and high-power electronic devices, improving their performance and reliability.
Questions about the technology: 1. How does the use of SAB improve the epitaxy of gallium nitride compared to traditional methods?
- SAB allows for direct bonding of the growth seed layer, reducing defects and minimizing substrate bowing and cracking, leading to improved epitaxy of gallium nitride.
2. What are the potential cost savings associated with using SAB for forming the growth seed layer?
- SAB is a faster process that conserves power, processing resources, and raw materials, resulting in cost savings in the manufacturing process.
Original Abstract Submitted
using surface activated bonding (sab) allows direct bonding of a silicon growth seed layer over an aluminum nitride substrate without an intervening oxide layer. the growth seed layer may include p− si(111) in order to allow for epitaxy of gallium nitride without exacerbating cte mismatch between silicon and the gallium nitride. as a result, defects in the gallium nitride are reduced, and bowing and cracking of the substrate is reduced, which improves performance of an electronic device including the gallium nitride. additionally, using sab is faster than other techniques for forming a growth seed layer as well as conserving power, processing resources, and raw materials that otherwise would have been expended in forming the growth seed layer.
