Taiwan semiconductor manufacturing company, ltd. (20240337951). METHOD OF MANUFACTURING PHOTO MASKS simplified abstract

METHOD OF MANUFACTURING PHOTO MASKS

Organization Name

taiwan semiconductor manufacturing company, ltd.

Inventor(s)

Chien-Cheng Chen of Hsinchu County (TW)

Chia-Jen Chen of Jhudong Township (TW)

Hsin-Chang Lee of Zhubei City (TW)

Shih-Ming Chang of Hsinchu (TW)

Tran-Hui Shen of Dounan Township (TW)

Yen-Cheng Ho of Taichung City (TW)

Chen-Shao Hsu of Changhua County (TW)

METHOD OF MANUFACTURING PHOTO MASKS - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240337951 titled 'METHOD OF MANUFACTURING PHOTO MASKS

Simplified Explanation

The patent application describes a method of manufacturing a photo mask for lithography by acquiring circuit pattern data, calculating pattern density, generating dummy pattern data for low-density areas, and creating mask drawing data. Patterns are then drawn on a resist layer using an electron beam lithography apparatus, and the resist layer is developed. Dummy patterns are not printed as part of the final photo mask pattern.

• Circuit pattern data is acquired.
• Pattern density is calculated from the circuit pattern data.
• Dummy pattern data is generated for areas with low pattern density.
• Mask drawing data is created from the circuit pattern data and dummy pattern data.
• Patterns are drawn on a resist layer using an electron beam lithography apparatus.
• The resist layer is developed, excluding the dummy patterns.

Key Features and Innovation

• Calculation of pattern density to determine areas for dummy patterns.
• Generation of dummy pattern data for low-density areas.
• Use of an electron beam lithography apparatus to draw patterns on a resist layer.
• Exclusion of dummy patterns from the final photo mask pattern.

Potential Applications

This technology can be applied in the manufacturing of photo masks for lithography processes in semiconductor fabrication and other industries requiring high-precision patterning.

Problems Solved

This technology addresses the need for efficient manufacturing of photo masks with precise patterns, especially in areas with low pattern density.

Benefits

• Improved accuracy in pattern generation for lithography processes.
• Enhanced efficiency in manufacturing photo masks.
• Reduction of material waste by excluding unnecessary patterns.

Commercial Applications

• Semiconductor industry for integrated circuit manufacturing.
• Display technology for producing high-resolution screens.
• Optoelectronics for creating precise optical components.

Prior Art

Readers interested in prior art related to this technology can explore patents and research papers on electron beam lithography, photo mask manufacturing, and pattern density calculations in lithography processes.

Frequently Updated Research

Researchers are continually exploring advancements in electron beam lithography technology, pattern generation algorithms, and materials for resist layers to enhance the efficiency and precision of lithography processes.

Questions about Lithography

How does pattern density affect the manufacturing of photo masks?

Pattern density influences the generation of dummy patterns in low-density areas, optimizing the use of the photo mask.

What are the key benefits of using an electron beam lithography apparatus in this method?

The electron beam lithography apparatus enables high-precision pattern drawing on the resist layer, enhancing the overall accuracy of the photo mask manufacturing process.

Original Abstract Submitted

in a method of manufacturing a photo mask for lithography, circuit pattern data are acquired. a pattern density, which is a total pattern area per predetermined area, is calculated from the circuit pattern data. dummy pattern data for areas having pattern density less than a threshold density are generated. mask drawing data is generated from the circuit pattern data and the dummy pattern data. by using an electron beam from an electron beam lithography apparatus, patterns are drawn according to the mask drawing data on a resist layer formed on a mask blank substrate. the drawn resist layer is developed using a developing solution. dummy patterns included in the dummy pattern data are not printed as a photo mask pattern when the resist layer is exposed with the electron beam and is developed.