Samsung electronics co., ltd. (20240339516). SEMICONDUCTOR DEVICE HAVING A SEPARATION STRUCTURE simplified abstract
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SEMICONDUCTOR DEVICE HAVING A SEPARATION STRUCTURE
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SEMICONDUCTOR DEVICE HAVING A SEPARATION STRUCTURE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240339516 titled 'SEMICONDUCTOR DEVICE HAVING A SEPARATION STRUCTURE
Simplified Explanation:
This patent application describes a semiconductor device with a unique gate structure and separation structure that improve its performance.
Key Features and Innovation:
- Semiconductor device with a substrate, lower pattern, channel pattern, source/drain pattern, first and second gate structures, and separation structure.
- First and second gate structures surround portions of the channel pattern and include stacked conductive patterns.
- Separation structure between the first and second gate structures includes a first portion extending in one direction and a second portion protruding towards the channel pattern.
- The length of the second conductive pattern in one direction is equal to or greater than the length of the second portion in that direction.
Potential Applications: The technology can be applied in various semiconductor devices, particularly in enhancing the performance and efficiency of transistors.
Problems Solved: This innovation addresses the need for improved gate structures in semiconductor devices to optimize their functionality and performance.
Benefits:
- Enhanced performance and efficiency of semiconductor devices.
- Improved control and functionality of transistors.
- Potential for increased speed and reliability in electronic devices.
Commercial Applications: This technology has significant commercial potential in the semiconductor industry, particularly in the development of advanced electronic devices with higher performance and efficiency.
Questions about Semiconductor Device Technology: 1. How does the unique gate structure in this semiconductor device improve its performance? 2. What specific benefits does the separation structure provide in enhancing the functionality of the device?
Original Abstract Submitted
a semiconductor device may include: a substrate; a lower pattern extending from the substrate in a first direction; a channel pattern disposed on the lower pattern; a source/drain pattern disposed on sides of the channel pattern; a first gate structure and a second gate structure extending in a second direction intersecting the first direction and surrounding respective portions of the channel pattern; and a separation structure disposed between the first gate structure and the second gate structure, and including a first portion extending in the first direction and a second portion protruding from the first portion toward the channel pattern, wherein the first gate structure includes first and second conductive patterns stacked sequentially from the respective portion of the channel pattern, and a length of the second conductive pattern in the second direction is equal to or greater than a length of the second portion in the second direction.
