Samsung electronics co., ltd. (20240339514). SEMICONDUCTOR DEVICES simplified abstract
Contents
SEMICONDUCTOR DEVICES
Organization Name
Inventor(s)
Sangjung Kang of Suwon-si (KR)
Jinwoo Kim of Hwaseong-si (KR)
Seulgi Yun of Hwaseong-si (KR)
SEMICONDUCTOR DEVICES - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240339514 titled 'SEMICONDUCTOR DEVICES
Simplified Explanation:
This semiconductor device consists of a substrate with four regions, each containing a gate structure with different layers and materials.
Key Features and Innovation:
- Semiconductor device with multiple gate structures in different regions of the substrate
- Gate structures include various dielectric layers and conductive layers
- Gate dielectric layers contain different materials and elements for improved performance
Potential Applications: This technology can be used in the manufacturing of advanced semiconductor devices for various electronic applications such as integrated circuits, microprocessors, and memory devices.
Problems Solved: This technology addresses the need for improved performance and efficiency in semiconductor devices by optimizing the gate structures with different materials and elements.
Benefits:
- Enhanced performance and efficiency in semiconductor devices
- Improved reliability and functionality
- Potential for higher speed and lower power consumption in electronic devices
Commercial Applications: The commercial applications of this technology include the production of high-performance electronic devices for consumer electronics, telecommunications, and computing industries. This innovation can lead to the development of faster and more energy-efficient devices.
Prior Art: For information on prior art related to this technology, researchers can explore patents and scientific literature on semiconductor device structures, gate dielectric materials, and advanced manufacturing processes in the field of microelectronics.
Frequently Updated Research: Researchers are continually exploring new materials and techniques to further enhance the performance and efficiency of semiconductor devices. Stay updated on the latest advancements in gate structure design and materials for cutting-edge electronic applications.
Questions about Semiconductor Device Technology: 1. What are the potential challenges in scaling this technology for mass production? 2. How does this innovation compare to existing semiconductor device structures in terms of performance and reliability?
Original Abstract Submitted
a semiconductor device includes a substrate having a first, a second, a third, and a fourth region; a first gate structure in the first region and including a first gate dielectric layer, and a first, a second, and a third conductive layer; a second gate structure in the second region and including a second gate dielectric layer, and the second and the third conductive layer; a third gate structure in the third region and including a third gate dielectric layer, and the second and the third conductive layer; and a fourth gate structure in the fourth region and including the second gate dielectric layer, and a fourth and the third conductive layer. the first gate dielectric layer includes a material of the second gate dielectric layer and a first element, and the third gate dielectric layer includes a material of the second gate dielectric layer and a second element.
