Samsung electronics co., ltd. (20240339498). SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME simplified abstract
Contents
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
Organization Name
Inventor(s)
Jong Ryeol Yoo of Suwon-si (KR)
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240339498 titled 'SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
The semiconductor device described in the patent application includes epitaxial patterns connected to bridge patterns stacked on different regions and penetrating through gate structures. The epitaxial layers contain impurities of different conductivity types and are overlapped by silicide patterns in specific directions.
- The semiconductor device features epitaxial patterns connected to bridge patterns on different regions.
- The epitaxial layers contain impurities of different conductivity types.
- Silicide patterns overlap the epitaxial patterns and bridge patterns in specific directions.
- The stress properties of the silicide patterns are different from each other.
Potential Applications: - This technology could be used in the manufacturing of advanced semiconductor devices. - It may find applications in the development of high-performance electronic components.
Problems Solved: - This technology addresses the need for improved semiconductor device performance. - It provides a solution for optimizing the stress properties of silicide patterns in semiconductor devices.
Benefits: - Enhanced performance and efficiency of semiconductor devices. - Improved reliability and durability of electronic components.
Commercial Applications: Title: Advanced Semiconductor Device Technology for Enhanced Performance This technology could be utilized in the production of high-performance electronic devices, leading to advancements in various industries such as telecommunications, computing, and consumer electronics.
Questions about the technology: 1. How does the different conductivity types of impurities in the epitaxial layers impact the performance of the semiconductor device? 2. What are the specific advantages of having silicide patterns with different stress properties in the device design?
Frequently Updated Research: Stay updated on the latest advancements in semiconductor device technology to ensure the continued relevance and competitiveness of this innovation in the market.
Original Abstract Submitted
a semiconductor device may include a first epitaxial pattern connected to first bridge patterns sequentially stacked on a first region and penetrating through a first gate structure, the first epitaxial layer on a side of the first gate structure and including a first conductivity type impurity, a first silicide pattern on the first epitaxial pattern and overlapping the first bridge patterns in the first direction, a second epitaxial pattern connected to second bridge patterns sequentially stacked on a second region and penetrating through a second gate structure, the second epitaxial layer on a side of the second gate structure and including a second conductivity type impurity different from the first conductivity type impurity, and a second silicide pattern on the second epitaxial pattern and overlapping the second bridge patterns in the third direction, wherein the first silicide pattern and the second silicide pattern have stress properties different from each other.
