Samsung electronics co., ltd. (20240339450). METHOD OF MANUFACTURING AN INTEGRATED CIRCUIT DEVICE simplified abstract
Contents
METHOD OF MANUFACTURING AN INTEGRATED CIRCUIT DEVICE
Organization Name
Inventor(s)
Junggil Yang of Hwaseong-si (KR)
METHOD OF MANUFACTURING AN INTEGRATED CIRCUIT DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240339450 titled 'METHOD OF MANUFACTURING AN INTEGRATED CIRCUIT DEVICE
Simplified Explanation:
This patent application describes an integrated circuit device with active regions, isolation films, gate cut insulating patterns, gate lines, and inter-region insulating patterns.
Key Features and Innovation:
- Integrated circuit device with first and second device regions.
- Fin active regions on each device region.
- Isolation film covering side walls of the active regions.
- Gate cut insulating patterns on the isolation film.
- Gate line limited in length by the gate cut insulating patterns.
- Inter-region insulating pattern between the fin active regions, partially penetrating the gate line.
Potential Applications: This technology can be used in the semiconductor industry for the development of advanced integrated circuits with improved performance and efficiency.
Problems Solved: This technology addresses the need for better isolation and control of active regions in integrated circuits, enhancing overall functionality and reliability.
Benefits:
- Enhanced performance and efficiency of integrated circuits.
- Improved isolation and control of active regions.
- Increased reliability of semiconductor devices.
Commercial Applications: Potential commercial applications include the production of high-performance electronic devices such as smartphones, tablets, and computers.
Prior Art: Readers interested in prior art related to this technology can explore patents and research papers in the field of semiconductor device fabrication and integrated circuit design.
Frequently Updated Research: Researchers in the semiconductor industry are constantly developing new techniques and materials to improve the performance and efficiency of integrated circuits. Stay updated on the latest advancements in this field for potential future applications.
Questions about Integrated Circuit Device Technology: 1. What are the key components of an integrated circuit device? 2. How does the inter-region insulating pattern improve the functionality of the device?
Original Abstract Submitted
an integrated circuit device including a substrate including first and second device regions; a first fin active region on the first device region; a second fin active region on the second device region; an isolation film covering side walls of the active regions; gate cut insulating patterns on the isolation film on the device regions; a gate line extending on the fin active regions, the gate line having a length limited by the gate cut insulating patterns; and an inter-region insulating pattern on the isolation film between the fin active regions and at least partially penetrating the gate line in a vertical direction, wherein the inter-region insulating pattern has a bottom surface proximate to the substrate, a top surface distal to the substrate, and a side wall linearly extending from the bottom to the top surface.
