Samsung electronics co., ltd. (20240339379). SEMICONDUCTOR DEVICE simplified abstract

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SEMICONDUCTOR DEVICE

Organization Name

samsung electronics co., ltd.

Inventor(s)

Da Woon Choi of Suwon-si (KR)

Bongkeun Kim of Suwon-si (KR)

Myung Soo Noh of Suwon-si (KR)

SEMICONDUCTOR DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240339379 titled 'SEMICONDUCTOR DEVICE

The semiconductor device described in the abstract includes various components such as active patterns, gate electrodes, source/drain regions, through-vias, and interlayer insulating layers.

  • The device features active patterns extending in different horizontal directions and spaced apart from each other.
  • A gate electrode extends in a specific horizontal direction.
  • Source/drain regions are positioned next to the gate electrode.
  • Through-vias are used to connect different components vertically.
  • The width of the through-vias is continuously reduced as they approach the lower surface of the substrate.

Potential Applications: - This technology can be used in the manufacturing of advanced semiconductor devices for various electronic applications. - It can enhance the performance and efficiency of integrated circuits in electronic devices.

Problems Solved: - The technology addresses the need for improved connectivity and integration of components in semiconductor devices. - It helps in reducing the size and increasing the functionality of electronic devices.

Benefits: - Improved performance and efficiency of semiconductor devices. - Enhanced connectivity and integration of components. - Reduction in size and increased functionality of electronic devices.

Commercial Applications: Title: Advanced Semiconductor Device Technology for Enhanced Connectivity This technology can be utilized in the production of smartphones, tablets, laptops, and other electronic devices to improve their performance and functionality.

Questions about Semiconductor Device Technology: 1. How does the reduction in width of through-vias near the lower surface of the substrate impact the overall performance of the semiconductor device?

  - The reduction in width helps in optimizing the vertical connections between components, leading to improved efficiency and functionality of the device.

2. What are the potential challenges in implementing this advanced semiconductor device technology in mass production?

  - Some challenges may include ensuring precise alignment of components, maintaining consistency in manufacturing processes, and managing the complexity of the device structure.


Original Abstract Submitted

a semiconductor device includes a substrate, a first active pattern extending in a first horizontal direction, a second active pattern extending in the first horizontal direction and spaced apart from the first active pattern in a second horizontal direction, a gate electrode extending in the second horizontal direction, a source/drain region disposed on a side of the gate electrode, a first through-via disposed inside the substrate between the first and second active patterns, an upper interlayer insulating layer covering the source/drain region, and a second through-via connected to the first through-via by passing through the upper interlayer insulating layer in a vertical direction spaced apart from the source/drain region in the second horizontal direction. a width of the first through-via in the second horizontal direction is continuously reduced as the first through-via becomes adjacent to the lower surface of the substrate.