Samsung electronics co., ltd. (20240339153). BIT LINE SENSE AMPLIFIER AND SEMICONDUCTOR MEMORY DEVICE HAVING THE SAME simplified abstract
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BIT LINE SENSE AMPLIFIER AND SEMICONDUCTOR MEMORY DEVICE HAVING THE SAME
Organization Name
Inventor(s)
BIT LINE SENSE AMPLIFIER AND SEMICONDUCTOR MEMORY DEVICE HAVING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240339153 titled 'BIT LINE SENSE AMPLIFIER AND SEMICONDUCTOR MEMORY DEVICE HAVING THE SAME
Simplified Explanation:
The abstract describes a bit line sense amplifier that includes semiconductor devices such as sensing transistors and selection transistors arranged side by side to detect voltage changes in a bit line and a complementary bit line.
- The sensing transistors share a source electrode, while the selection transistors can be controlled to turn on and off in a complementary manner.
- The wiring patterns in the amplifier connect the gate electrodes of the sensing transistors and the drain electrodes of the selection transistors, as well as connect the gate electrode of one sensing transistor to the drain electrode of another sensing transistor.
Key Features and Innovation:
- Plurality of semiconductor devices including sensing and selection transistors
- Side by side arrangement for detecting voltage changes in bit lines
- Shared source electrode for sensing transistors
- Complementary control of selection transistors
- Wiring patterns connecting gate and drain electrodes of transistors
Potential Applications:
- Memory devices
- Data storage systems
- Integrated circuits
Problems Solved:
- Efficient voltage change detection
- Improved signal processing
- Enhanced data storage capabilities
Benefits:
- Faster data processing
- Higher accuracy in signal detection
- Increased reliability in memory systems
Commercial Applications:
The technology can be utilized in the development of advanced memory systems for various applications such as data storage, computing, and telecommunications. This innovation can significantly enhance the performance and efficiency of memory devices in the market.
Prior Art:
Readers interested in exploring prior art related to this technology can start by researching semiconductor device design, memory systems, and signal processing techniques in the field of integrated circuits.
Frequently Updated Research:
Researchers are constantly exploring new ways to improve the efficiency and performance of semiconductor devices, including advancements in memory systems and signal processing technologies. Stay updated on the latest research in these areas to discover new innovations in the field.
Questions about Bit Line Sense Amplifiers:
1. How does the shared source electrode in sensing transistors contribute to the overall functionality of the amplifier? 2. What are the potential challenges in implementing complementary control of selection transistors in this technology?
Original Abstract Submitted
a bit line sense amplifier includes a plurality of semiconductor devices including sensing transistors and selection transistors disposed side by side, and configured to sense a voltage change of a bit line and a complementary bit line, and wiring patterns connected to at least one of the plurality of semiconductor devices. the sensing transistors share a source electrode. the selection transistors may be controlled to be complementarily turned on and off. the wiring patterns include a first wiring pattern electrically connecting gate electrodes of the sensing transistors and drain electrodes of the selection transistors, and a second wiring pattern electrically connecting a gate electrode of a sensing transistor and a drain electrode of another sensing transistor.
