Taiwan semiconductor manufacturing co., ltd. (20240330564). SEMICONDUCOTR DEVICE HAVING POWER RAIL WITH NON-LINEAR EDGE simplified abstract
Contents
SEMICONDUCOTR DEVICE HAVING POWER RAIL WITH NON-LINEAR EDGE
Organization Name
taiwan semiconductor manufacturing co., ltd.
Inventor(s)
Jung-Chan Yang of Hsinchu (TW)
Hui-Zhong Zhuang of Hsinchu (TW)
Ting-Wei Chiang of Hsinchu (TW)
SEMICONDUCOTR DEVICE HAVING POWER RAIL WITH NON-LINEAR EDGE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240330564 titled 'SEMICONDUCOTR DEVICE HAVING POWER RAIL WITH NON-LINEAR EDGE
The semiconductor device described in the abstract includes active regions and a gate electrode extending in different directions, as well as a power rail with offset inner edges.
- The semiconductor device has active regions extending in a first direction.
- A gate electrode is positioned over the active regions, extending in a second direction perpendicular to the first direction.
- A power rail is present, extending in the first direction.
- The power rail consists of a first power rail portion with a first inner edge adjacent to the first boundary, and a second power rail portion with a second inner edge adjacent to the second boundary.
- The first inner edge is offset from the second inner edge in the second direction.
Potential Applications: - This technology could be used in the manufacturing of advanced semiconductor devices for various electronic applications. - It may find applications in the development of high-performance integrated circuits.
Problems Solved: - This innovation addresses the need for efficient power distribution in semiconductor devices. - It helps in optimizing the layout and design of semiconductor components.
Benefits: - Improved performance and reliability of semiconductor devices. - Enhanced power distribution capabilities. - Potential for increased efficiency in electronic systems.
Commercial Applications: Title: Advanced Semiconductor Devices for Enhanced Power Distribution This technology could have commercial applications in the semiconductor industry for the production of high-performance electronic devices. It may also be utilized in the development of cutting-edge integrated circuits for various electronic applications.
Questions about the technology: 1. How does the offset inner edges of the power rail contribute to the overall performance of the semiconductor device? 2. What are the potential implications of this innovation on the efficiency of electronic systems?
Original Abstract Submitted
a semiconductor device includes a plurality of active regions extending in a first direction. the semiconductor device further includes a gate electrode over the plurality of active regions, wherein the gate electrode extends in a second direction perpendicular to the first direction. the semiconductor device further includes a power rail extending in the first direction. the power rail includes a first power rail portion adjacent to the first boundary, wherein the first power rail portion has a first inner edge, and a second power rail portion adjacent to the second boundary, wherein the second power rail portion has a second inner edge, and the first inner edge is offset from the second inner edge in the second direction.
