Taiwan semiconductor manufacturing co., ltd. (20240329302). Photonic Package and Method of Manufacture simplified abstract
Contents
Photonic Package and Method of Manufacture
Organization Name
taiwan semiconductor manufacturing co., ltd.
Inventor(s)
Kuo-Chiang Ting of Hsinchu (TW)
Photonic Package and Method of Manufacture - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240329302 titled 'Photonic Package and Method of Manufacture
The patent application describes a package that includes silicon waveguides, photonic devices, redistribution structures, and a hybrid interconnect structure.
- Silicon waveguides are located on one side of an oxide layer.
- Photonic devices are coupled to the silicon waveguides.
- Redistribution structures on the same side of the oxide layer are electrically connected to the photonic devices.
- A hybrid interconnect structure on the other side of the oxide layer consists of silicon nitride waveguides separated by dielectric layers.
- Through vias extend through the hybrid interconnect structure and the oxide layer, making physical and electrical connections to the redistribution structures.
Potential Applications: - Optical communication systems - Integrated photonics devices - Data centers - Telecommunications networks
Problems Solved: - Efficient data transmission - Integration of photonic devices - Miniaturization of optical components
Benefits: - Improved signal transmission - Enhanced data processing capabilities - Space-saving design
Commercial Applications: Title: "Advanced Integrated Photonics Package for High-Speed Data Transmission" This technology can be used in the development of high-speed data transmission systems for various industries, including telecommunications, data centers, and networking equipment manufacturers.
Questions about the technology: 1. How does the hybrid interconnect structure improve the performance of the photonic devices? 2. What are the advantages of using silicon waveguides in the package design?
Original Abstract Submitted
a package includes silicon waveguides on a first side of an oxide layer; photonic devices on the first side of the oxide layer, wherein the photonic devices are coupled to the silicon waveguides; redistribution structures over the first side of the oxide layer, wherein the redistribution structures are electrically connected to the photonic devices; a hybrid interconnect structure on a second side of the oxide layer, wherein the hybrid interconnect structure includes a stack of silicon nitride waveguides that are separated by dielectric layers; and through vias extending through the hybrid interconnect structure and the oxide layer, wherein the through vias make physical and electrical connection to the redistribution structures.
