Taiwan semiconductor manufacturing co., ltd. (20240327677). CHEMICAL MECHANICAL POLISHING SLURRY COMPOSITION AND METHOD OF POLISHING METAL LAYER simplified abstract

CHEMICAL MECHANICAL POLISHING SLURRY COMPOSITION AND METHOD OF POLISHING METAL LAYER

Organization Name

taiwan semiconductor manufacturing co., ltd.

Inventor(s)

Chun-Hung Liao of Taichung (TW)

An-Hsuan Lee of Hsinchu (TW)

Shen-Nan Lee of Hsinchu County (TW)

Teng-Chun Tsai of Hsinchu City (TW)

Chen-Hao Wu of Hsinchu (TW)

Huang-Lin Chao of Hillsboro OR (US)

CHEMICAL MECHANICAL POLISHING SLURRY COMPOSITION AND METHOD OF POLISHING METAL LAYER - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240327677 titled 'CHEMICAL MECHANICAL POLISHING SLURRY COMPOSITION AND METHOD OF POLISHING METAL LAYER

Simplified Explanation: The patent application discusses a chemical mechanical polishing (CMP) slurry composition and a method for polishing a metal layer using this composition, which includes metal oxide and a chelator containing a thiol compound or thiolether compound.

Key Features and Innovation:

• CMP slurry composition for polishing metal layers
• Contains metal oxide and chelator with thiol or thiolether compound
• Ranges of 0.1 to 10 parts by weight for both metal oxide and chelator

Potential Applications: This technology can be used in the semiconductor industry for polishing metal layers on integrated circuits and other electronic devices.

Problems Solved:

• Provides a more effective and efficient method for polishing metal layers
• Helps improve the performance and reliability of electronic devices

Benefits:

• Enhanced polishing capabilities
• Improved quality and consistency of metal layer polishing
• Increased productivity and cost-effectiveness in manufacturing processes

Commercial Applications: Potential commercial applications include semiconductor manufacturing, electronics production, and other industries requiring precise metal polishing processes.

Questions about CMP Slurry Composition: 1. How does the inclusion of a chelator with a thiol compound or thiolether compound improve the polishing process? 2. What are the specific benefits of using a CMP slurry composition with metal oxide and chelator in metal layer polishing?

Frequently Updated Research: There may be ongoing research on optimizing the composition of CMP slurries for various metal polishing applications. Researchers may be exploring new chelator compounds or refining the ratios of metal oxide and chelator for improved performance.

Original Abstract Submitted

a cmp slurry composition and a method of polishing a metal layer are provided. in some embodiments, the cmp slurry composition includes about 0.1 to 10 parts by weight of a metal oxide, and about 0.1 to 10 parts by weight of a chelator. the chelator includes a thiol compound or a thiolether compound.