Samsung electronics co., ltd. (20240334840). MAGNETIC TUNNELING JUNCTION DEVICE AND MEMORY DEVICE INCLUDING THE SAME simplified abstract
Contents
MAGNETIC TUNNELING JUNCTION DEVICE AND MEMORY DEVICE INCLUDING THE SAME
Organization Name
Inventor(s)
Seonggeon Park of Seongnam-si (KR)
Naoki Hase of Hwaseong-si (KR)
MAGNETIC TUNNELING JUNCTION DEVICE AND MEMORY DEVICE INCLUDING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240334840 titled 'MAGNETIC TUNNELING JUNCTION DEVICE AND MEMORY DEVICE INCLUDING THE SAME
- Simplified Explanation:**
The patent application describes a magnetic tunneling junction device with improved stability and operating speed, as well as a memory device incorporating this technology.
- Key Features and Innovation:**
- Magnetic tunneling junction device with perpendicular magnetic anisotropy (PMA) for stability.
- Free layer with magnetic material doped with a non-magnetic metal.
- Second oxide layer with metal oxide ZO for enhanced performance.
- Oxygen affinity of metal Z greater than non-magnetic metal X.
- Potential Applications:**
This technology can be used in memory devices, data storage systems, and other electronic applications requiring stable and fast magnetic properties.
- Problems Solved:**
The technology addresses the need for more stable perpendicular magnetic anisotropy and increased operating speed in magnetic tunneling junction devices.
- Benefits:**
- Improved stability and reliability.
- Increased operating speed.
- Enhanced performance in memory devices.
- Commercial Applications:**
Potential commercial applications include data storage devices, magnetic sensors, and magnetic random-access memory (MRAM) systems.
- Prior Art:**
Researchers can explore prior art related to magnetic tunneling junction devices, PMA, and magnetic material doping to understand the evolution of this technology.
- Frequently Updated Research:**
Stay updated on research related to magnetic tunneling junction devices, PMA, and materials science to track advancements in this field.
- Questions about Magnetic Tunneling Junction Devices:**
1. How does the doping of magnetic material with a non-magnetic metal improve the performance of the free layer? 2. What are the key differences between the oxygen affinities of metal Z and non-magnetic metal X in the context of the second oxide layer?
Original Abstract Submitted
provided are a magnetic tunneling junction device having more stable perpendicular magnetic anisotropy (pma) and/or increased operating speed, and/or a memory device including the magnetic tunneling junction device. the magnetic tunneling junction device includes a free layer having a first surface and a second surface opposite the first surface; a pinned layer facing the first surface of the free layer; a first oxide layer between the pinned layer and the free layer; and a second oxide layer on the second surface of the free layer. the free layer includes a magnetic material x doped with a non-magnetic metal. the second oxide layer includes zowhich is an oxide of a metal z. an oxygen affinity of the metal z is greater than an oxygen affinity of the non-magnetic metal x.
