Samsung electronics co., ltd. (20240334716). SEMICONDUCTOR DEVICES AND DATA STORAGE SYSTEMS INCLUDING THE SAME simplified abstract

From WikiPatents
Revision as of 16:04, 4 October 2024 by Wikipatents (talk | contribs) (Creating a new page)
(diff) ← Older revision | Latest revision (diff) | Newer revision → (diff)
Jump to navigation Jump to search

SEMICONDUCTOR DEVICES AND DATA STORAGE SYSTEMS INCLUDING THE SAME

Organization Name

samsung electronics co., ltd.

Inventor(s)

Moorym Choi of Suwon-si (KR)

Seungwoo Paek of Suwon-si (KR)

Sunil Shim of Suwon-si (KR)

Yunsun Jang of Suwon-si (KR)

SEMICONDUCTOR DEVICES AND DATA STORAGE SYSTEMS INCLUDING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240334716 titled 'SEMICONDUCTOR DEVICES AND DATA STORAGE SYSTEMS INCLUDING THE SAME

The semiconductor device described in the abstract consists of two semiconductor structures, with the first structure containing circuit elements on a substrate, interconnection structures, and bonding structures. The second structure includes a second substrate, insulating patterns, gate electrodes, separation regions, channel structures, and interconnection structures.

  • The first semiconductor structure contains circuit elements on a substrate, lower interconnection structures, and lower bonding structures.
  • The second semiconductor structure includes a second substrate, insulating patterns, gate electrodes, separation regions, channel structures, and interconnection structures.
  • The separation insulating patterns in the second structure include first separation insulating patterns on separation regions and second separation insulating patterns between channel structures.
  • The upper bonding structure in the second structure is bonded to the lower bonding structure in the first structure.

Potential Applications: - This technology can be applied in the semiconductor industry for advanced electronic devices. - It can be used in the development of high-performance integrated circuits.

Problems Solved: - This technology addresses the need for improved semiconductor device structures with enhanced performance and functionality.

Benefits: - The technology offers increased efficiency and performance in semiconductor devices. - It provides a more compact and reliable design for electronic circuits.

Commercial Applications: - The technology can be utilized in the production of smartphones, computers, and other electronic devices. - It has potential applications in the automotive industry for advanced driver assistance systems.

Questions about Semiconductor Device Structures: 1. How does the bonding structure in the second semiconductor structure enhance the overall performance of the device? 2. What are the specific advantages of using separation insulating patterns in the second semiconductor structure?

Frequently Updated Research: - Stay updated on the latest advancements in semiconductor device structures to ensure optimal performance and functionality.


Original Abstract Submitted

a semiconductor device includes a first semiconductor structure including circuit elements on a first substrate, a lower interconnection structure on the circuit elements, and a lower bonding structure on the lower interconnection structure; and a second semiconductor structure including a second substrate on the first semiconductor structure, separation insulating patterns separating the second substrate, and disposed to be spaced apart from each other, gate electrodes stacked to be spaced apart from each other, separation regions passing through the gate electrodes, and disposed to be spaced apart from each other, channel structures passing through the gate electrodes, an upper interconnection structure below the gate electrodes, and an upper bonding structure bonded to the lower bonding structure, wherein the separation insulating patterns include first separation insulating patterns on the separation regions, and second separation insulating patterns between the channel structures and passing through the second substrate.