Samsung electronics co., ltd. (20240334673). SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME simplified abstract
Contents
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
Organization Name
Inventor(s)
Hyun Geun Choi of Suwon-si (KR)
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240334673 titled 'SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
The semiconductor device described in the abstract includes a lower substrate, a memory cell structure with a wordline and bitline on the lower substrate, a cell capacitor connected to the lower substrate, an upper substrate with a circuit element on the front side, and a through via connecting the memory cell structure and the circuit element.
- The innovation involves integrating a memory cell structure with a circuit element on separate substrates.
- The through via allows for electrical connection between the memory cell structure and the circuit element.
- The design enables vertical overlapping of the circuit element and memory cell structure, optimizing space utilization.
- This configuration enhances the performance and efficiency of the semiconductor device.
- The technology opens up possibilities for more compact and integrated semiconductor devices.
Potential Applications: - Memory devices - Integrated circuits - Semiconductor manufacturing
Problems Solved: - Space optimization in semiconductor devices - Enhanced performance and efficiency - Improved integration of memory and circuit elements
Benefits: - Increased functionality in a smaller footprint - Enhanced performance and efficiency - Improved overall design flexibility
Commercial Applications: Title: "Integrated Semiconductor Device with Enhanced Efficiency" This technology can be applied in various industries such as consumer electronics, telecommunications, and automotive for the development of more advanced and compact devices.
Questions about the technology: 1. How does the through via contribute to the efficiency of the semiconductor device?
The through via enables electrical connection between the memory cell structure and the circuit element, enhancing overall performance.
2. What are the potential implications of integrating memory and circuit elements on separate substrates?
This integration allows for more compact and efficient semiconductor device designs.
Original Abstract Submitted
a semiconductor device includes a lower substrate, a memory cell structure including a wordline on the lower substrate, a bitline disposed on the lower substrate and intersecting the wordline, and a cell capacitor connected to the lower substrate, an upper substrate having a back side adjacent to the lower substrate and a front side opposite to the back side, a circuit element disposed on the front side of the upper substrate and overlapping the memory cell structure in a vertical direction, and a through via penetrating the upper substrate and electrically connecting the memory cell structure and the circuit element with each other.
