Samsung electronics co., ltd. (20240332431). SEMICONDUCTOR DEVICE INCLUDING ESD DIODE AND METHOD FOR MANUFACTURING THE SAME simplified abstract

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SEMICONDUCTOR DEVICE INCLUDING ESD DIODE AND METHOD FOR MANUFACTURING THE SAME

Organization Name

samsung electronics co., ltd.

Inventor(s)

Jungmin Seo of Suwon-si (KR)

Sukkang Sung of Suwon-si (KR)

Cheonan Lee of Suwon-si (KR)

Sangeun Lee of Suwon-si (KR)

Chanho Lee of Suwon-si (KR)

SEMICONDUCTOR DEVICE INCLUDING ESD DIODE AND METHOD FOR MANUFACTURING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240332431 titled 'SEMICONDUCTOR DEVICE INCLUDING ESD DIODE AND METHOD FOR MANUFACTURING THE SAME

The semiconductor device described in the abstract includes a first power supply pad, a second power supply pad, a signal pad, and an electrostatic discharge (ESD) diode with an uneven structure on at least one impurity region.

  • First power supply pad for receiving a high voltage
  • Second power supply pad for receiving a lower voltage
  • Signal pad for exchanging signals
  • ESD diode with impurity regions of different conductivity types
  • Uneven structure on impurity regions for improved performance

Potential Applications: - Integrated circuits - Electronic devices requiring ESD protection

Problems Solved: - Protection against electrostatic discharge - Efficient power supply management

Benefits: - Enhanced reliability of semiconductor devices - Improved signal integrity - Better protection against voltage spikes

Commercial Applications: Title: "Enhanced ESD Protection Semiconductor Devices" This technology can be used in various electronic devices, such as smartphones, laptops, and automotive electronics, to ensure reliable operation and protection against ESD events. The market implications include increased demand for high-quality semiconductor components in the electronics industry.

Questions about the technology: 1. How does the uneven structure on the impurity regions improve the performance of the ESD diode?

  - The uneven structure helps to dissipate electrostatic discharge more effectively, reducing the risk of damage to the semiconductor device.

2. What are the specific benefits of using a second power supply pad with a lower voltage level?

  - The lower voltage level on the second power supply pad helps to protect the device from high voltage spikes and ensures stable operation.


Original Abstract Submitted

a semiconductor device according to an embodiment of the present inventive concept comprises: a first power supply pad configured to receive a first power supply voltage; a second power supply pad configured to receive a second power supply voltage, the second power supply voltage having a level lower than a level of the first power supply voltage; a signal pad configured to exchange a signal; and a first electrostatic discharge (esd) diode comprising a first impurity region doped with impurities of a first conductivity type and connected to the first power supply pad, and a second impurity region doped with impurities of a second conductivity type different from the first conductivity type and connected to the signal pad, wherein a lower surface of at least one of the first impurity region and the second impurity region has an uneven structure.