Samsung electronics co., ltd. (20240332381). SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME simplified abstract
Contents
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
Organization Name
Inventor(s)
Chung Hwan Shin of Suwon-si (KR)
Seong Heum Choi of Suwon-si (KR)
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240332381 titled 'SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
The semiconductor device described in the patent application includes an active pattern, a gate structure with a gate electrode and gate spacer, a gate contact, a source/drain pattern, a source/drain contact, and a via plug.
- The active pattern extends in one direction, while the gate electrode extends in a different direction intersecting the first.
- The gate structure is spaced apart from the active pattern.
- The gate contact and via plug have upper surfaces on the same plane.
- The gate contact and via plug have different lower surface heights based on the active pattern's upper surface.
Potential Applications: - This technology could be used in the manufacturing of advanced semiconductor devices for various electronic applications. - It may find applications in the development of high-performance integrated circuits.
Problems Solved: - Provides a more efficient and precise method for fabricating semiconductor devices. - Helps in improving the performance and reliability of electronic devices.
Benefits: - Enhanced functionality and performance of semiconductor devices. - Increased efficiency in manufacturing processes. - Improved overall quality and reliability of electronic products.
Commercial Applications: Title: Advanced Semiconductor Device Technology for Enhanced Performance This technology could be utilized in the production of smartphones, tablets, computers, and other consumer electronics. It could also be beneficial in the automotive industry for advanced driver assistance systems and in the healthcare sector for medical devices.
Questions about the technology: 1. How does the placement of the gate contact and via plug on the same plane impact the overall performance of the semiconductor device? 2. What are the specific advantages of having the gate electrode extend in a direction intersecting the active pattern?
Frequently Updated Research: Researchers are continually exploring new materials and processes to further enhance the performance and efficiency of semiconductor devices. Stay updated on the latest advancements in the field to leverage the full potential of this technology.
Original Abstract Submitted
a semiconductor device may include an active pattern extending in a first direction, a gate structure which is placed on the active pattern to be spaced apart from each other in the first direction, and includes a gate electrode and a gate spacer, the gate electrode extending in a second direction intersecting the first direction, a gate contact on the gate structure, a source/drain pattern on the active pattern, a source/drain contact on the source/drain pattern, and a via plug on the source/drain contact. an upper surface of the gate contact and a second upper surface of the via plug may be placed on the same plane. a lower surface of the gate contact and a lower surface of the via plug may be different in height, on the basis of an upper surface of the active pattern.
