Samsung electronics co., ltd. (20240332358). SEMICONDUCTOR DEVICE INCLUDING A FIELD EFFECT TRANSISTOR AND METHOD OF FABRICATING THE SAME simplified abstract
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SEMICONDUCTOR DEVICE INCLUDING A FIELD EFFECT TRANSISTOR AND METHOD OF FABRICATING THE SAME
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SEMICONDUCTOR DEVICE INCLUDING A FIELD EFFECT TRANSISTOR AND METHOD OF FABRICATING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240332358 titled 'SEMICONDUCTOR DEVICE INCLUDING A FIELD EFFECT TRANSISTOR AND METHOD OF FABRICATING THE SAME
The semiconductor device described in the abstract consists of a first substrate with different regions, an active pattern, a source/drain pattern, a through contact, a first metal layer, a second substrate with an impurity region, lower and upper bonding pads, and a power delivery network layer.
- The device has a complex structure with multiple layers and regions for efficient functionality.
- The through contact connects the first metal layer to the lower bonding pad, facilitating electrical connections within the device.
- The impurity region in the second substrate is connected to the upper bonding pad, enabling specific electrical pathways.
- The power delivery network layer on the bottom surface of the first substrate enhances power distribution and management within the device.
- The bonding pads play a crucial role in connecting different components of the device for overall functionality.
Potential Applications: - This semiconductor device can be used in various electronic applications requiring efficient power delivery and connectivity. - It can be utilized in the manufacturing of advanced integrated circuits and microprocessors for improved performance.
Problems Solved: - The device addresses the need for reliable electrical connections and power distribution in complex semiconductor structures. - It provides a solution for enhancing the functionality and efficiency of electronic devices through optimized design.
Benefits: - Improved electrical connectivity and power distribution within the device. - Enhanced performance and reliability of electronic applications utilizing this semiconductor technology.
Commercial Applications: - The technology can be applied in the production of high-performance electronic devices such as smartphones, computers, and IoT devices. - It has implications for the semiconductor industry, offering advancements in design and functionality for next-generation electronic products.
Questions about the technology: 1. How does the impurity region in the second substrate impact the overall functionality of the semiconductor device? 2. What role do the bonding pads play in connecting different components within the device?
Frequently Updated Research: - Stay updated on advancements in semiconductor manufacturing techniques and materials to enhance the performance of this technology.
Original Abstract Submitted
a semiconductor device includes: a first substrate that includes a first region and a second region; an active pattern disposed on the first region; a source/drain pattern disposed on the active pattern; a through contact disposed on the second region; a first metal layer disposed on the through contact; a second substrate disposed on the first metal layer, wherein the second substrate includes an impurity region; a lower bonding pad disposed between the first metal layer and the second substrate; an upper bonding pad disposed on the lower bonding pad; and a power delivery network layer disposed on a bottom surface of the first substrate, wherein the lower bonding pad and the upper bonding pad are in contact with each other, wherein the through contact is connected to the lower bonding pad, and wherein the impurity region is connected to the upper bonding pad.
