Samsung electronics co., ltd. (20240332305). SEMICONDUCTOR DEVICE HAVING ACTIVE FIN PATTERN AT CELL BOUNDARY simplified abstract
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SEMICONDUCTOR DEVICE HAVING ACTIVE FIN PATTERN AT CELL BOUNDARY
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SEMICONDUCTOR DEVICE HAVING ACTIVE FIN PATTERN AT CELL BOUNDARY - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240332305 titled 'SEMICONDUCTOR DEVICE HAVING ACTIVE FIN PATTERN AT CELL BOUNDARY
The semiconductor device described in the abstract consists of two standard cells with different cell heights, separated by a power line running along the boundary between them.
- The first standard cell is in a first row on the substrate, while the second standard cell is in a second row adjacent to the first row.
- The first standard cell has a first cell height, while the second standard cell has a second cell height that is different from the first.
- A power line extends in a first direction along the boundary between the first and second standard cells.
Potential Applications: - This technology could be used in the design and manufacturing of semiconductor devices for various electronic applications. - It may find applications in the development of integrated circuits and other electronic components.
Problems Solved: - This innovation addresses the need for efficient power distribution and management within semiconductor devices. - It helps in optimizing the layout and design of standard cells on a substrate.
Benefits: - Improved power distribution efficiency within semiconductor devices. - Enhanced design flexibility for standard cell layouts on substrates.
Commercial Applications: Title: Semiconductor Device with Variable Cell Heights This technology could have commercial applications in the semiconductor industry for the production of advanced electronic devices with optimized power distribution and layout design.
Questions about Semiconductor Device with Variable Cell Heights: 1. How does the power line running along the boundary between standard cells contribute to the overall efficiency of the semiconductor device? 2. What are the key factors to consider when designing standard cells with variable heights in semiconductor devices?
Original Abstract Submitted
a semiconductor device includes a first standard cell disposed on a substrate in a first row and having a first cell height; a second standard cell disposed on the substrate in a second row, adjacent to the first row, second standard cell having a second cell height, different from the first cell height; and a power line extending in a first direction along a boundary between the first standard cell and the second standard cell.
