Samsung electronics co., ltd. (20240332186). SEMICONDUCTOR DEVICE simplified abstract
Contents
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240332186 titled 'SEMICONDUCTOR DEVICE
The semiconductor device described in the abstract consists of a substrate with a fin-type active pattern, a gate structure, a source/drain region, a contact structure, a buried conductive structure, and a conductive through structure.
- The fin-type active pattern is located on the first surface of the substrate.
- The gate structure intersects the fin-type active pattern.
- The source/drain region is positioned on the fin-type active pattern next to the gate structure.
- A contact structure is connected to the source/drain region.
- A buried conductive structure extends perpendicularly from the first surface and is electrically connected to the contact structure.
- A conductive through structure extends from the second surface of the substrate towards the first surface and contacts the buried conductive structure. This structure has a narrower width at the first surface level compared to the second surface level.
Potential Applications: - This technology can be applied in the semiconductor industry for the development of advanced electronic devices. - It can enhance the performance and efficiency of integrated circuits.
Problems Solved: - Provides improved electrical connectivity within semiconductor devices. - Enhances the overall functionality and reliability of electronic components.
Benefits: - Increased conductivity and signal transmission efficiency. - Enhanced device performance and operational speed. - Improved reliability and longevity of semiconductor devices.
Commercial Applications: Title: Advanced Semiconductor Device Technology for Enhanced Electronic Components This technology can be utilized in the production of high-performance electronic devices such as smartphones, computers, and other consumer electronics. It can also benefit industries that require advanced semiconductor solutions for their products.
Questions about the technology: 1. How does the buried conductive structure improve the electrical connectivity of the semiconductor device? 2. What are the potential market implications of implementing this advanced semiconductor technology in various electronic devices?
Original Abstract Submitted
a semiconductor device includes a substrate having opposite first and second surfaces, a fin-type active pattern on the first surface of the substrate, a gate structure intersecting the fin-type active pattern, a source/drain region on the fin-type active pattern at a side of the gate structure, a contact structure connected to the source/drain region, a buried conductive structure electrically connected to the contact structure and extending in a direction perpendicular to the first surface, and a conductive through structure extending from the second surface of the substrate toward the first surface of the substrate and contacting with the buried conductive structure, the conductive through structure has a first width at a level adjacent to the first surface, narrower than a second width at a level adjacent to the second surface.
