Samsung electronics co., ltd. (20240332185). INTEGRATED CIRCUIT DEVICES INCLUDING A BACK SIDE POWER DISTRIBUTION NETWORK STRUCTURE AND METHODS OF FORMING THE SAME simplified abstract

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INTEGRATED CIRCUIT DEVICES INCLUDING A BACK SIDE POWER DISTRIBUTION NETWORK STRUCTURE AND METHODS OF FORMING THE SAME

Organization Name

samsung electronics co., ltd.

Inventor(s)

TAE SUN Kim of Ballston Spa NY (US)

WONHYUK Hong of Clifton Park NY (US)

JONGJIN Lee of Clifton Park NY (US)

KANG-ILL Seo of Springfield VA (US)

INTEGRATED CIRCUIT DEVICES INCLUDING A BACK SIDE POWER DISTRIBUTION NETWORK STRUCTURE AND METHODS OF FORMING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240332185 titled 'INTEGRATED CIRCUIT DEVICES INCLUDING A BACK SIDE POWER DISTRIBUTION NETWORK STRUCTURE AND METHODS OF FORMING THE SAME

Simplified Explanation: The patent application describes integrated circuit devices with a backside power distribution network structure, logic device region, and passive device region. It also includes a backside insulating layer with a dam separating the logic device region and passive device region.

  • The integrated circuit devices feature a backside power distribution network structure (BSPDNS).
  • The devices consist of a logic device region and a passive device region on the BSPDNS.
  • A backside insulating layer separates the BSPDNS from the logic device region and passive device region.
  • The passive device region includes a semiconductor layer within the backside insulating layer.
  • A dam separates the backside insulating layer from the semiconductor layer in the passive device region.

Potential Applications: 1. Semiconductor manufacturing 2. Electronics industry 3. Integrated circuit design

Problems Solved: 1. Efficient power distribution in integrated circuits 2. Enhanced performance of logic and passive devices 3. Improved insulation between different regions of the circuit

Benefits: 1. Higher efficiency in power distribution 2. Enhanced performance of integrated circuits 3. Improved reliability and durability of devices

Commercial Applications: Potential commercial applications include semiconductor manufacturing, electronics production, and integrated circuit design services. This innovation could lead to more efficient and reliable electronic devices in various industries.

Prior Art: Readers interested in prior art related to this technology may explore patents and research papers in the field of integrated circuit design, semiconductor manufacturing, and power distribution networks in electronic devices.

Frequently Updated Research: Researchers in the field of integrated circuit design and semiconductor manufacturing may provide updates on advancements in power distribution networks and insulation techniques for electronic devices.

Questions about Integrated Circuit Devices with BSPDNS: 1. How does the backside power distribution network structure improve the performance of integrated circuit devices? 2. What are the potential challenges in implementing the backside insulating layer in semiconductor manufacturing processes?


Original Abstract Submitted

integrated circuit devices and methods of forming the same are provided. the integrated circuit devices may include a backside power distribution network structure (bspdns), a logic device region and a passive device region on the bspdns, a backside insulating layer including a first portion extending between the bspdns and the logic device region and a second portion extending between the bspdns and the passive device region, the passive device region including a semiconductor layer that is in the backside insulating layer, and a dam separating the first portion of the backside insulating layer from the semiconductor layer of the passive device region.