Samsung electronics co., ltd. (20240332131). INTEGRATED CIRCUIT DEVICES INCLUDING STACKED TRANSISTORS AND METHODS OF FORMING THE SAME simplified abstract
Contents
INTEGRATED CIRCUIT DEVICES INCLUDING STACKED TRANSISTORS AND METHODS OF FORMING THE SAME
Organization Name
Inventor(s)
JINTAE Kim of Clifton Park NY (US)
Keumseok Park of Slingerlands NY (US)
Kang-Ill Seo of Springfield VA (US)
INTEGRATED CIRCUIT DEVICES INCLUDING STACKED TRANSISTORS AND METHODS OF FORMING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240332131 titled 'INTEGRATED CIRCUIT DEVICES INCLUDING STACKED TRANSISTORS AND METHODS OF FORMING THE SAME
The abstract describes an integrated circuit device that includes a power switch cell with an upper transistor on a substrate and a lower transistor between the substrate and the upper transistor. The upper transistor has an upper channel region, first and second upper source/drain regions, and an upper gate electrode. The lower transistor has a lower channel region, first and second lower source/drain regions, and a lower gate electrode. The upper and lower source/drain regions have the same conductivity type, with the first upper source/drain region and the first lower source/drain region electrically connected, as well as the second upper source/drain region and the second lower source/drain region. The upper and lower gate electrodes are also electrically connected.
- Upper transistor with upper channel region, source/drain regions, and gate electrode
- Lower transistor with lower channel region, source/drain regions, and gate electrode
- Electrical connections between corresponding upper and lower source/drain regions
- Electrical connection between upper and lower gate electrodes
- Power switch cell design for integrated circuit devices
Potential Applications: - Power management systems - Battery charging circuits - Motor control systems
Problems Solved: - Efficient power switching - Improved circuit performance - Enhanced reliability
Benefits: - Increased efficiency - Better control of power flow - Enhanced overall device performance
Commercial Applications: Title: "Advanced Power Switch Cell for Integrated Circuits" This technology can be utilized in various industries such as consumer electronics, automotive, and industrial automation for improved power management and control.
Prior Art: Readers can explore prior art related to power switch cells, integrated circuit design, and semiconductor device technology to understand the evolution of similar concepts.
Frequently Updated Research: Stay updated on the latest advancements in power switch cell technology, integrated circuit design, and semiconductor manufacturing processes for potential improvements and innovations.
Questions about Power Switch Cell Technology: 1. How does the design of the upper and lower transistors contribute to the overall efficiency of the power switch cell? 2. What are the key factors to consider when implementing this technology in different applications?
Original Abstract Submitted
integrated circuit devices may include a power switch cell including an upper transistor on a substrate and a lower transistor between the substrate and the upper transistor. the upper transistor may include an upper channel region, first and second upper source/drain regions, and an upper gate electrode on the upper channel region. the lower transistor may include a lower channel region, first and second lower source/drain regions, and a lower gate electrode on the lower channel region. the first and second upper source/drain regions and the first and second lower source/drain regions may have the same conductivity type, the first upper source/drain region and the first lower source/drain region may be electrically connected to each other, the second upper source/drain region and the second lower source/drain region may be electrically connected to each other, and the upper and lower gate electrodes may be electrically connected to each other.
