Samsung electronics co., ltd. (20240332090). METHOD FOR FABRICATING A SEMICONDUCTOR DEVICE simplified abstract
Contents
METHOD FOR FABRICATING A SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Myung Soo Seo of Suwon-si (KR)
METHOD FOR FABRICATING A SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240332090 titled 'METHOD FOR FABRICATING A SEMICONDUCTOR DEVICE
The method for fabricating a semiconductor device involves creating active patterns on a substrate in different regions, forming gate insulating layers on these patterns, and then creating gate electrodes in each region with multiple layers.
- First to fourth active patterns are formed in corresponding regions on the substrate.
- Gate insulating layers are then applied to each active pattern.
- First, second, third, and fourth gate electrodes are formed in the respective regions, each consisting of multiple layers.
Potential Applications: - This technology can be used in the manufacturing of various semiconductor devices such as transistors and integrated circuits. - It can improve the performance and efficiency of electronic devices.
Problems Solved: - Enhances the functionality and reliability of semiconductor devices. - Allows for more precise control and operation of electronic components.
Benefits: - Increased speed and performance of electronic devices. - Higher level of integration and miniaturization. - Improved energy efficiency and overall device reliability.
Commercial Applications: - This technology has significant commercial applications in the semiconductor industry, particularly in the production of advanced electronic devices for various consumer and industrial applications.
Questions about the technology: 1. How does the fabrication process of semiconductor devices impact their overall performance and functionality? 2. What are the key advantages of using multiple layers in gate electrodes for semiconductor devices?
Original Abstract Submitted
a method for fabricating a semiconductor device includes providing a substrate having first to fourth regions defined thereon. first to fourth active patterns are formed in the first to fourth regions, respectively. each of the first to fourth active patterns extends in a first horizontal direction. a gate insulating layer is formed on each of the first to fourth active patterns. a first gate electrode is formed in the first region and includes first and fifth layers, a second gate electrode is formed in the second region and includes first, second and fifth layers, a third gate electrode is formed in the third region and includes first, third, fourth and fifth layers and a fourth gate electrode is formed in the fourth region and includes first, second, third, fourth and fifth layers.
