Samsung electronics co., ltd. (20240332059). METHOD OF FABRICATING SEMICONDUCTOR DEVICE simplified abstract

METHOD OF FABRICATING SEMICONDUCTOR DEVICE

Organization Name

samsung electronics co., ltd.

Inventor(s)

Youngin Kim of Suwon-si (KR)

BYOUNGHO Kwon of Suwon-si (KR)

Yeil Kim of Suwon-si (KR)

JONGHYUK Park of Suwon-si (KR)

JIN-WOO Bae of Suwon-si (KR)

KYOUNGJOON Song of Suwon-si (KR)

MYUNGJAE Jang of Suwon-si (KR)

Byungsoo Joo of Suwon-si (KR)

METHOD OF FABRICATING SEMICONDUCTOR DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240332059 titled 'METHOD OF FABRICATING SEMICONDUCTOR DEVICE

The method described in the patent application involves fabricating a semiconductor device by forming a device isolation trench in a semiconductor substrate, filling it with dielectric layers, and then polishing the layers to create a device isolation structure.

• Formation of a device isolation trench in the semiconductor substrate to define active regions.
• Application of a first liner dielectric layer on the top surface and inner wall of the device isolation trench.
• Addition of a second liner dielectric layer on top of the first liner dielectric layer.
• Filling the device isolation trench with a buried dielectric layer.
• Polishing the second liner dielectric layer and the buried dielectric layer to create the device isolation structure.
• Creating a mask pattern over the active regions.
• Partially patterning the active regions and the device isolation structure to form gate trenches.

Potential Applications: - Semiconductor manufacturing - Integrated circuit fabrication - Electronics industry

Problems Solved: - Improved isolation of active regions in semiconductor devices - Enhanced device performance and reliability - Simplified fabrication process

Benefits: - Increased efficiency in semiconductor device manufacturing - Higher quality and more reliable devices - Cost-effective production process

Commercial Applications: Title: Semiconductor Device Fabrication Method for Enhanced Performance This technology can be used in the production of various semiconductor devices, including microprocessors, memory chips, and sensors. It has the potential to revolutionize the semiconductor industry by improving device performance and reliability while reducing manufacturing costs.

Prior Art: Readers can explore prior art related to semiconductor device fabrication methods, dielectric layer deposition techniques, and device isolation structures in semiconductor manufacturing processes.

Frequently Updated Research: Researchers are constantly exploring new materials and techniques to further improve semiconductor device fabrication processes. Stay updated on the latest advancements in dielectric materials, polishing methods, and device isolation technologies.

Questions about Semiconductor Device Fabrication Method: 1. How does the method described in the patent application compare to traditional semiconductor fabrication processes? - The method offers improved device isolation and performance compared to traditional processes by utilizing multiple dielectric layers and a polishing step. 2. What are the potential challenges or limitations of implementing this fabrication method in large-scale semiconductor production? - Large-scale implementation may require optimization of process parameters and equipment to ensure consistent results and cost-effectiveness.

Original Abstract Submitted

a method of fabricating a semiconductor device includes forming, in a semiconductor substrate, a device isolation trench defining active regions, forming a first liner dielectric layer covering a top surface of the semiconductor substrate and an inner wall of the device isolation trench, forming a second liner dielectric layer covering the first liner dielectric layer, forming a buried dielectric layer filling the device isolation trench, performing a polishing process on the second liner dielectric layer and the buried dielectric layer to form a device isolation structure, forming a mask pattern running across the active regions, and partially patterning the active regions and the device isolation structure to form gate trenches. after the polishing process, the first liner dielectric layer, the second liner dielectric layer, and the buried dielectric layer have their top surfaces formed by the polishing process coplanar with each other.