Samsung electronics co., ltd. (20240331785). NONVOLATILE MEMORY DEVICE AND OPERATION METHOD THEREOF simplified abstract
Contents
- 1 NONVOLATILE MEMORY DEVICE AND OPERATION METHOD THEREOF
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 NONVOLATILE MEMORY DEVICE AND OPERATION METHOD THEREOF - A simplified explanation of the abstract
- 1.4 Potential Applications
- 1.5 Problems Solved
- 1.6 Benefits
- 1.7 Commercial Applications
- 1.8 Questions about Nonvolatile Memory Device
- 1.8.1 How does the vertical connection between the peripheral circuit region and memory cell region improve the performance of the nonvolatile memory device?
- 1.8.2 What are the potential challenges in implementing the method of programming described in the patent application in mass production of nonvolatile memory devices?
- 1.9 Original Abstract Submitted
NONVOLATILE MEMORY DEVICE AND OPERATION METHOD THEREOF
Organization Name
Inventor(s)
Kyung-Min Kang of Suwon-Si (KR)
Su Chang Jeon of Suwon-Si (KR)
Won-Taeck Jung of Suwon-Si (KR)
NONVOLATILE MEMORY DEVICE AND OPERATION METHOD THEREOF - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240331785 titled 'NONVOLATILE MEMORY DEVICE AND OPERATION METHOD THEREOF
The abstract describes a nonvolatile memory device with a peripheral circuit region and a memory cell region connected vertically. The peripheral circuit region includes at least one first metal pad, while the memory cell region includes at least one second metal pad directly connected to the first metal pad. The method of programming the device involves receiving a programming command, data for multiple pages, and an address for a selected word-line. The data for one page is programmed to an unselected word-line, data from a previously programmed page is read from the selected word-line, and the data for the remaining pages and the previously programmed page are programmed to the selected word-line.
- Peripheral circuit region and memory cell region vertically connected
- First metal pad in peripheral circuit region
- Second metal pad in memory cell region directly connected to first metal pad
- Method involves receiving programming command, data, and address
- Programming data for one page to unselected word-line
- Reading data from previously programmed page
- Programming data for remaining pages and previously programmed page to selected word-line
Potential Applications
The technology described in this patent application could be used in various nonvolatile memory devices, such as solid-state drives, USB flash drives, and memory cards.
Problems Solved
This technology addresses the need for efficient programming of data in nonvolatile memory devices, improving overall performance and reliability.
Benefits
The benefits of this technology include faster programming speeds, increased data storage capacity, and enhanced data retention capabilities in nonvolatile memory devices.
Commercial Applications
The commercial applications of this technology could revolutionize the data storage industry by providing more efficient and reliable nonvolatile memory solutions for various electronic devices.
Questions about Nonvolatile Memory Device
How does the vertical connection between the peripheral circuit region and memory cell region improve the performance of the nonvolatile memory device?
The vertical connection allows for more efficient data transfer between the two regions, reducing latency and improving overall device speed and reliability.
What are the potential challenges in implementing the method of programming described in the patent application in mass production of nonvolatile memory devices?
One potential challenge could be ensuring consistent and accurate programming of data across multiple pages and word-lines in high-volume manufacturing processes.
Original Abstract Submitted
a nonvolatile memory device includes a peripheral circuit region and a memory cell region vertically connected with the peripheral circuit region, the peripheral circuit region including at least one first metal pad, and the memory cell region including at least one second metal pad directly connected with the at least one first metal pad. a method of programming the nonvolatile memory device incudes: receiving a programming command, data for a plurality of pages, and an address corresponding to a selected word-line; programming the data for one of the pages to an unselected word-line; reading data of a previously programmed page from the selected word-line; and programming the data for the remaining pages and the data of the previously programmed page to the selected word-line.
