Samsung electronics co., ltd. (20240331782). NONVOLATILE MEMORY DEVICE AND METHOD OF CONTROLLING THE SAME simplified abstract
Contents
NONVOLATILE MEMORY DEVICE AND METHOD OF CONTROLLING THE SAME
Organization Name
Inventor(s)
Junyeong Seok of Suwon-si (KR)
NONVOLATILE MEMORY DEVICE AND METHOD OF CONTROLLING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240331782 titled 'NONVOLATILE MEMORY DEVICE AND METHOD OF CONTROLLING THE SAME
The patent application describes a method for managing memory blocks in a vertical direction, specifically focusing on sub blocks within a memory block containing cell strings with memory cells.
- Normal erase operations are independently performed on each sub block.
- A disturbance verification read operation is conducted on the first sub block to check if the threshold voltage of memory cells in an erased state has increased beyond a reference level.
- A post erase operation is selectively carried out based on the results of the disturbance verification read operation to decrease the threshold voltage of memory cells in the erased state of the first sub block.
Potential Applications: - This technology can be applied in the development of more efficient and reliable memory storage devices. - It can enhance the performance of flash memory systems by optimizing erase operations.
Problems Solved: - Addresses issues related to threshold voltage variations in memory cells during erase operations. - Improves the overall reliability and longevity of memory storage devices.
Benefits: - Increased efficiency in memory block management. - Enhanced reliability and performance of memory storage devices. - Optimized erase operations leading to improved data retention.
Commercial Applications: Title: "Enhanced Memory Block Management Technology for Flash Memory Systems" This technology can be utilized in the production of high-performance solid-state drives (SSDs) for consumer electronics, data centers, and other storage applications. It can also benefit manufacturers of mobile devices, cameras, and other gadgets requiring reliable and efficient memory storage solutions.
Prior Art: Readers interested in exploring prior art related to this technology can start by researching patents and publications in the field of flash memory management, specifically focusing on methods for optimizing erase operations and improving memory cell performance.
Frequently Updated Research: Researchers in the field of semiconductor memory technology are constantly working on enhancing the efficiency and reliability of memory storage devices. Stay updated on the latest developments in flash memory management to leverage cutting-edge innovations in the industry.
Questions about Memory Block Management Technology: 1. How does this technology improve the reliability of memory storage devices? - This technology enhances reliability by optimizing erase operations and reducing threshold voltage variations in memory cells. 2. What are the potential applications of this technology beyond flash memory systems? - This technology can also be applied in other types of non-volatile memory devices to improve performance and efficiency.
Original Abstract Submitted
a memory block is divided into sub blocks including a first sub block and a second sub block that are disposed in a vertical direction where the memory block includes a plurality of cell strings and each cell string includes a plurality of memory cells that are disposed in the vertical direction. a normal erase operation is performed independently with respect to each of the sub blocks. a disturbance verification read operation with respect to the first sub block is performed to determine whether a threshold voltage of memory cells connected to a wordline in an erased state of the first sub block is increased higher than a reference level. a post erase operation is selectively performed based on a result of the disturbance verification read operation to decrease the threshold voltage of memory cells in the erased state of the first sub block.
