Samsung electronics co., ltd. (20240331776). PAGE BUFFER CIRCUIT AND MEMORY DEVICE INCLUDING THE SAME simplified abstract
Contents
PAGE BUFFER CIRCUIT AND MEMORY DEVICE INCLUDING THE SAME
Organization Name
Inventor(s)
Yongsung Cho of Hwaseong-si (KR)
PAGE BUFFER CIRCUIT AND MEMORY DEVICE INCLUDING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240331776 titled 'PAGE BUFFER CIRCUIT AND MEMORY DEVICE INCLUDING THE SAME
The abstract of the patent application describes a memory device with a memory cell array and a page buffer circuit connected to the memory cell array through multiple bit lines, each with a corresponding page buffer containing a sensing node. The first page buffer in the array includes a first sensing node that senses data through a first metal wire at a lower metal layer, and a second metal wire at an upper metal layer connected to the first metal wire. Additionally, there is a boost node corresponding to a third metal wire adjacent to the second metal wire, controlling the voltage of the first sensing node.
- Memory device with a memory cell array and page buffer circuit
- Page buffers connected to memory cell array through multiple bit lines
- First page buffer includes a first sensing node and a second metal wire at an upper layer
- Boost node controls voltage of the first sensing node
- Innovation focuses on efficient data sensing and control mechanisms
Potential Applications: - Data storage devices - Computer memory systems - Embedded systems
Problems Solved: - Improved data sensing accuracy - Enhanced voltage control mechanisms
Benefits: - Higher data processing speeds - Increased memory efficiency
Commercial Applications: Title: Advanced Memory Devices for Enhanced Data Processing This technology can be utilized in various industries such as: - Consumer electronics - Data centers - Telecommunications
Prior Art: Research on memory cell arrays and page buffer circuits in semiconductor devices can provide insights into similar innovations.
Frequently Updated Research: Ongoing studies on memory device technologies and semiconductor advancements can offer new perspectives on enhancing data processing capabilities.
Questions about Memory Device Technology: 1. How does the boost node in the first page buffer contribute to voltage control? 2. What are the potential implications of this technology in the field of data storage and processing?
Original Abstract Submitted
a memory device includes a memory cell array, and a page buffer circuit connected to the memory cell array through a plurality of bit lines, including a plurality of page buffers arranged in correspondence with the bit lines and each of which includes a sensing node. the plurality of page buffers include a first page buffer, and the first page buffer includes: a first sensing node configured to sense data by corresponding to a first metal wire at a lower metal layer; and a second metal wire electrically connected to the first metal wire and at an upper metal layer located above the lower metal layer, and a boost node corresponding to a third metal wire adjacent to the second metal wire of the upper metal layer and configured to control a boost-up and a boost-down of a voltage of the first sensing node.
