Samsung electronics co., ltd. (20240331774). NONVOLATILE MEMORY DEVICE, STORAGE DEVICE INCLUDING THE SAME, AND METHOD OF TESTING NONVOLATILE MEMORY DEVICE simplified abstract
NONVOLATILE MEMORY DEVICE, STORAGE DEVICE INCLUDING THE SAME, AND METHOD OF TESTING NONVOLATILE MEMORY DEVICE
Organization Name
Inventor(s)
Daeseok Byeon of Suwon-si (KR)
NONVOLATILE MEMORY DEVICE, STORAGE DEVICE INCLUDING THE SAME, AND METHOD OF TESTING NONVOLATILE MEMORY DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240331774 titled 'NONVOLATILE MEMORY DEVICE, STORAGE DEVICE INCLUDING THE SAME, AND METHOD OF TESTING NONVOLATILE MEMORY DEVICE
The patent application describes a nonvolatile memory device with a page buffer, a control signal generator, and a current mirror.
- The page buffer is connected to a bitline and allows a replicated current to flow through a ground terminal in response to control signals.
- The control signal generator outputs the necessary control signals to the page buffer.
- The current mirror outputs a control voltage in virtual cell mode corresponding to a bias current, which is controlled by the first control signal.
Potential Applications: - Nonvolatile memory devices in electronic devices - Data storage in computers and servers
Problems Solved: - Efficient data storage and retrieval in nonvolatile memory devices - Improved control of current flow in memory devices
Benefits: - Faster data access and storage - Enhanced reliability and performance of memory devices
Commercial Applications: Title: "Advanced Nonvolatile Memory Devices for High-Performance Computing" This technology can be used in high-performance computing systems, data centers, and consumer electronics for faster and more reliable data storage and retrieval.
Questions about the technology: 1. How does the current mirror in the nonvolatile memory device enhance performance?
The current mirror in the device helps control the bias current, improving the efficiency of data storage and retrieval.
2. What are the key advantages of using a page buffer in a nonvolatile memory device?
The page buffer allows for efficient current flow and control signals, leading to faster data access and storage.
Original Abstract Submitted
a nonvolatile memory device may include a page buffer, a control signal generator, and a current mirror. the page buffer may be connected to a bitline and may allow a replicated current to flow through a ground terminal in response to a first control signal and a second control signal. the control signal generator may output the first control signal and the second control signal to the page buffer. the current mirror may output, in a virtual cell mode, a control voltage corresponding to a bias current. the control voltage may correspond to the first control signal.
