Intel corporation (20240332432). VARACTOR COMPRISING HIGH PERFORMANCE THIN FILM TRANSISTOR MATERIAL simplified abstract
Contents
VARACTOR COMPRISING HIGH PERFORMANCE THIN FILM TRANSISTOR MATERIAL
Organization Name
Inventor(s)
Sukru Yemenicioglu of Portland OR (US)
Abhishek Anil Sharma of Portland OR (US)
Sudipto Naskar of Portland OR (US)
Kalyan C. Kolluru of Portland OR (US)
VARACTOR COMPRISING HIGH PERFORMANCE THIN FILM TRANSISTOR MATERIAL - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240332432 titled 'VARACTOR COMPRISING HIGH PERFORMANCE THIN FILM TRANSISTOR MATERIAL
- Simplified Explanation:**
This patent application describes an integrated circuit device that includes a varactor with a thin film transistor (TFT) channel material between two conductive contacts.
- Key Features and Innovation:**
- Integrated circuit device with a varactor and TFT channel material.
- First conductive contact and second conductive contact.
- Thin film transistor technology utilized for improved performance.
- Potential Applications:**
The technology can be used in various electronic devices such as smartphones, tablets, and computers for frequency tuning and signal processing.
- Problems Solved:**
This technology addresses the need for efficient frequency tuning and signal processing in electronic devices.
- Benefits:**
- Improved performance and efficiency in electronic devices.
- Enhanced frequency tuning capabilities.
- Better signal processing for optimal device functionality.
- Commercial Applications:**
The technology can be applied in the telecommunications industry for improved signal processing and frequency tuning in devices, leading to better performance and user experience.
- Questions about the Technology:**
1. How does the integration of a varactor and TFT channel material improve the performance of electronic devices? 2. What specific advantages does thin film transistor technology offer in this integrated circuit device?
Original Abstract Submitted
an integrated circuit device comprising a varactor comprising a first conductive contact; a second conductive contact; and a thin film transistor (tft) channel material coupled between the first conductive contact and the second conductive contact.
